TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMB10J18AHR5G

SMB10J18AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AA

1910

SMBJ8.5CAHR5G

SMBJ8.5CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 8.5V 14.4V DO214AA

0

BZW04-17HR1G

BZW04-17HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO204AL

0

SMCJ170AHM6G

SMCJ170AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AB

0

BZW04-7V0 R1G

BZW04-7V0 R1G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO204AL

0

1KSMB16AHM4G

1KSMB16AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 13.6V 22.5V DO214AA

0

SMCJ15A R7G

SMCJ15A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AB

0

P4KE18CA R0G

P4KE18CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 15.3V 25.5V DO204AL

0

SMA6J11A R3G

SMA6J11A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 17.2V DO214AC

3215

SMB10J16CAHM4G

SMB10J16CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO214AA

0

P4KE110AHR0G

P4KE110AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AL

0

PGSMAJ36AHM2G

PGSMAJ36AHM2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

1.5KE7.5CA B0G

1.5KE7.5CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO201

0

P6KE68AHB0G

P6KE68AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AC

0

BZW04-58HR0G

BZW04-58HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO204AL

0

SA75CAHR0G

SA75CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO204AC

0

SA60CAHB0G

SA60CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 60V 96.8V DO204AC

0

SA43A R0G

SA43A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 43V 69.4V DO204AC

0

P6KE36CA R0G

P6KE36CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO204AC

0

SA20AHR0G

SA20AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 43V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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