TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P6SMB47CA R5G

P6SMB47CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO214AA

0

SMAJ28AHM2G

SMAJ28AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AC

0

SA18AHB0G

SA18AHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 39.4V DO204AC

0

SMBJ6.5A M4G

SMBJ6.5A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 6.5V 11.2V DO214AA

0

SA16CA R0G

SA16CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 16V 26V DO204AC

0

BZW04-48B R0G

BZW04-48B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO204AL

0

P6KE91A R0G

P6KE91A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 77.8V 125V DO204AC

0

BZW06-23B R0G

BZW06-23B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 48.3V DO204AC

0

SA54CAHA0G

SA54CAHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO204AC

0

P4KE220AHR0G

P4KE220AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 185V 328V DO204AL

0

SMAJ85AHR3G

SMAJ85AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO214AC

7301

P6SMB62A M4G

P6SMB62A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO214AA

0

SMBJ14CA M4G

SMBJ14CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AA

0

SMAJ26CA M2G

SMAJ26CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AC

0

P4KE24A A0G

P4KE24A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AL

0

PGSMAJ30A M2G

PGSMAJ30A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMAJ26A M2G

SMAJ26A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AC

0

P6SMB56CAHM4G

P6SMB56CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO214AA

0

1.5SMC91A R7G

1.5SMC91A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 77.8V 125V DO214AB

0

SMDJ30AHR7G

SMDJ30AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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