TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMB10J13CA M4G

SMB10J13CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO214AA

0

BZW04-239BHR1G

BZW04-239BHR1G

TSC (Taiwan Semiconductor)

TVS DIODE 239V 384V DO204AL

0

SMAJ14A R3G

SMAJ14A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AC

0

P4KE33AHR0G

P4KE33AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO204AL

0

5.0SMDJ40AHM6G

5.0SMDJ40AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO214AB

0

SMDJ33CA R7G

SMDJ33CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AB

0

SA58CAHB0G

SA58CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 58V 93.6V DO204AC

0

1.5SMC24CAHR7G

1.5SMC24CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AB

0

SMAJ12AHM2G

SMAJ12AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AC

0

SMBJ75AHR5G

SMBJ75AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO214AA

0

P4KE160CA R0G

P4KE160CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO204AL

0

SMCJ160CA V6G

SMCJ160CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AB

0

1KSMB91A R5G

1KSMB91A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 77.8V 125V DO214AA

0

PGSMAJ10A R3G

PGSMAJ10A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

3580

SMCJ26CAHR7G

SMCJ26CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AB

0

P6KE10CAHR0G

P6KE10CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO204AC

0

P6SMB20A R5G

P6SMB20A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AA

0

SA170CA R0G

SA170CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO204AC

0

1V5KE39CA

1V5KE39CA

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO201AD

0

SMF54A RVG

SMF54A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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