TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA51CAHR0G

SA51CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO204AC

0

1.5SMC200CA R7G

1.5SMC200CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO214AB

0

SMCJ30A R7G

SMCJ30A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AB

0

SMDJ15A V7G

SMDJ15A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AB

0

SMCJ12CA M6G

SMCJ12CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

P6KE15AHR0G

P6KE15AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO204AC

0

SMDJ11CA R7G

SMDJ11CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AB

0

1.5KE180CAHR0G

1.5KE180CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO201

0

SMCJ36AHM6G

SMCJ36AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO214AB

0

SMAJ54CAHM2G

SMAJ54CAHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AC

0

SMAJ28A R3G

SMAJ28A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AC

3348

BZW04-7V8HR0G

BZW04-7V8HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AL

0

SMAJ17A M2G

SMAJ17A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.6V DO214AC

0

SA8.0CA R0G

SA8.0CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 8V 13.6V DO204AC

0

BZW04-26B R0G

BZW04-26B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.5V DO204AL

0

SMAJ120CA R3G

SMAJ120CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AC

0

1.5KE56CA B0G

1.5KE56CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO201

0

P6SMB8.2AHR5G

P6SMB8.2AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO214AA

0

P4KE43CA R0G

P4KE43CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO204AL

0

BZW04-188 R0G

BZW04-188 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 188V 301V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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