TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMF8.5A RQG

SMF8.5A RQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

P4SMA10CA R3G

P4SMA10CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 8.55V 14.5V DO214AC

0

BZW04-213HR0G

BZW04-213HR0G

TSC (Taiwan Semiconductor)

TVS DIODE 213V 344V DO204AL

0

SMCJ120A V6G

SMCJ120A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AB

0

SMAJ45AHR3G

SMAJ45AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AC

1980

PGSMAJ90AHM2G

PGSMAJ90AHM2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

PGSMAJ60CAHE3G

PGSMAJ60CAHE3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3473

SMA6S24AH

SMA6S24AH

TSC (Taiwan Semiconductor)

600W, 10V - 70V, SMD TVS PG STRU

6985

1.5SMC22A R7G

1.5SMC22A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO214AB

0

PGSMAJ10AHR3G

PGSMAJ10AHR3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

P6SMB200CA M4G

P6SMB200CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO214AA

0

SA28A R0G

SA28A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 59V DO204AC

0

SMAJ12A R3G

SMAJ12A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AC

3325

SMBJ100CAHR5G

SMBJ100CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 100V 162V DO214AA

0

BZW04-7V8 R0G

BZW04-7V8 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AL

0

SMB10J12CAHR5G

SMB10J12CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AA

444

SMF18AHRVG

SMF18AHRVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

5540

SA24CAHB0G

SA24CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 50.1V DO204AC

0

SA9.0CA A0G

SA9.0CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO204AC

0

SA13A R0G

SA13A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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