TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMAJ12CA M2G

SMAJ12CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AC

0

BZW04-154BHR1G

BZW04-154BHR1G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO204AL

0

SMCJ24AHM6G

SMCJ24AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AB

0

SA100A R0G

SA100A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 100V 162V DO204AC

0

SMCJ160A R7G

SMCJ160A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AB

0

1V5KE12CA

1V5KE12CA

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO201AD

0

BZW04-94HR1G

BZW04-94HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AL

0

SMAJ28CA R3G

SMAJ28CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AC

0

SMAJ9.0A R3G

SMAJ9.0A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AC

0

SMAJ188CHR3G

SMAJ188CHR3G

TSC (Taiwan Semiconductor)

400W 232V 10% BIDIRECTIONAL TVS

3100

P6KE30CAHR0G

P6KE30CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO204AC

0

1.5SMC68CA V6G

1.5SMC68CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AB

0

SA24A A0G

SA24A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 50.1V DO204AC

0

SMDJ12CA R7G

SMDJ12CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

SMDJ13A V7G

SMDJ13A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO214AB

0

BZW04-136 R0G

BZW04-136 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO204AL

0

SA10AHR0G

SA10AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO204AC

0

P4KE400CAHR0G

P4KE400CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO204AL

0

1.5SMC20CAHR7G

1.5SMC20CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AB

0

SA90AHR0G

SA90AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 90V 146V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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