TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
PGSMAJ10A M2G

PGSMAJ10A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

PGSMAJ58A M2G

PGSMAJ58A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMDJ20CA R7G

SMDJ20CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AB

0

1.5SMC68CA R7G

1.5SMC68CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO214AB

0

SMBJ10CA

SMBJ10CA

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AA

10840

SMCJ22CA V7G

SMCJ22CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

0

P6SMB62CAHM4G

P6SMB62CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO214AA

0

SMDJ10A R7G

SMDJ10A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AB

0

P4SMA22AHR3G

P4SMA22AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO214AC

0

BZW04-64HR1G

BZW04-64HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO204AL

0

SMBJ54AHM4G

SMBJ54AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AA

0

SMCJ54CAHR7G

SMCJ54CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AB

0

1V5KE62CA

1V5KE62CA

TSC (Taiwan Semiconductor)

TVS DIODE 53V 85V DO201AE

0

1.5SMC33AHM6G

1.5SMC33AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AB

0

P6KE24CA R0G

P6KE24CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AC

0

SA54CAHR0G

SA54CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO204AC

0

SA130CAHB0G

SA130CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 130V 209V DO204AC

0

SMBJ8V5A

SMBJ8V5A

TSC (Taiwan Semiconductor)

TVS DIODE 8.5V 14.4V DO214AA

8067

SA17CA B0G

SA17CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 17V 27.7V DO204AC

0

SMF13AHRQG

SMF13AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top