TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMDJ33AHR7G

SMDJ33AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AB

0

P6KE12CA R0G

P6KE12CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO204AC

0

PGSMAJ16A R3G

PGSMAJ16A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

0

P4KE75CA R0G

P4KE75CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO204AL

0

1.5KE82A B0G

1.5KE82A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO201

0

1V5KE9V1CA

1V5KE9V1CA

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO201AE

0

P4SMA43CA R3G

P4SMA43CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 36.8V 59.3V DO214AC

0

P4SMA36CAHR3G

P4SMA36CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AC

0

P4SMA20AHR3G

P4SMA20AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 17.1V 27.7V DO214AC

0

SA7.0CAHB0G

SA7.0CAHB0G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO204AC

0

SMBJ28A M4G

SMBJ28A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AA

0

SMAJ58AHR3G

SMAJ58AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 58V 93.6V DO214AC

2412

BZW04-13B R0G

BZW04-13B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO204AL

0

SA33A B0G

SA33A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 71.4V DO204AC

0

P6SMB56CAHR5G

P6SMB56CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO214AA

0

P6SMB150CAHM4G

P6SMB150CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO214AA

0

P4KE250A A0G

P4KE250A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 214V 344V DO204AL

0

1.5SMC6.8CA R7G

1.5SMC6.8CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO214AB

0

1.5KE82CAHR0G

1.5KE82CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO201

0

P4SMA13CA M2G

P4SMA13CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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