TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
PGSMAJ48A R3G

PGSMAJ48A R3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

1.5KE13AHR0G

1.5KE13AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 11.1V 18.2V DO201

0

SMBJ160CA R5G

SMBJ160CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 160V 259V DO214AA

0

SMBJ7.5CA R5G

SMBJ7.5CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 7.5V 12.9V DO214AA

0

P6KE9.1CA R0G

P6KE9.1CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AC

0

SMCJ48CA R7G

SMCJ48CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

P4KE110A R1G

P4KE110A R1G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AL

0

TLD8S14AH

TLD8S14AH

TSC (Taiwan Semiconductor)

6600W,10V-43V SURFACE MOUNT TRAN

1500

5.0SMDJ45A M6G

5.0SMDJ45A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

P4KE47CA R0G

P4KE47CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 40.2V 64.8V DO204AL

0

1V5KE22CA

1V5KE22CA

TSC (Taiwan Semiconductor)

TRANS VOLTAGE SUPPRESSOR DIODE,

0

1.5KE400A B0G

1.5KE400A B0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201

0

SA13CA B0G

SA13CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO204AC

0

P6SMB160CAHR5G

P6SMB160CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO214AA

0

P6SMB180CA M4G

P6SMB180CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO214AA

0

SMAJ36HR3G

SMAJ36HR3G

TSC (Taiwan Semiconductor)

400W 44.5V 10% UNIDIRECTIONAL TV

3600

P6KE170CAHR0G

P6KE170CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO204AC

0

SMDJ48AHR7G

SMDJ48AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

P4SMA8.2AHR3G

P4SMA8.2AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO214AC

0

SMF64AHRVG

SMF64AHRVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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