TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
P4KE100AHR1G

P4KE100AHR1G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

SMBJ130CA R5G

SMBJ130CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 130V 209V DO214AA

0

TLD5S14AH

TLD5S14AH

TSC (Taiwan Semiconductor)

3600W,10V-43V SURFACE MOUNT TRAN

0

1.5SMC33CAHR7G

1.5SMC33CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AB

0

P6KE200A A0G

P6KE200A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 171V 274V DO204AC

2487

SMA6J10A R3G

SMA6J10A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 15.7V DO214AC

3265

SMCJ45A V6G

SMCJ45A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AB

0

P6SMB100CA M4G

P6SMB100CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO214AA

0

PGSMAJ20A M2G

PGSMAJ20A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

P6SMB36AHM4G

P6SMB36AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AA

0

1.5SMC75A R7G

1.5SMC75A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO214AB

0

SMAJ45CAHR3G

SMAJ45CAHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO214AC

0

SMBJ110CA R5G

SMBJ110CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 110V 177V DO214AA

0

SMBJ18CAHM4G

SMBJ18CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AA

0

5.0SMDJ22A M6G

5.0SMDJ22A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 35.5V DO214AB

5907

SMCJ15A V6G

SMCJ15A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AB

0

SMCJ13CA M6G

SMCJ13CA M6G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO214AB

0

SA10A R0G

SA10A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO204AC

0

SMAJ54CA M2G

SMAJ54CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AC

0

SA45CA A0G

SA45CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 45V 72.7V DO204AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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