TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
BZW04-31 R0G

BZW04-31 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO204AL

0

1.5KE82CA A0G

1.5KE82CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO201

0

SMA6J18A R3G

SMA6J18A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 28.3V DO214AC

3245

P6KE6.8A A0G

P6KE6.8A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO204AC

0

SMDJ54CAHR7G

SMDJ54CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AB

0

1.5SMC82CA V6G

1.5SMC82CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AB

0

1V5KE20CA

1V5KE20CA

TSC (Taiwan Semiconductor)

TRANS VOLTAGE SUPPRESSOR DIODE,

1523

SA22AHR0G

SA22AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 22V 46.6V DO204AC

0

SMA6J30AHM2G

SMA6J30AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 30V 48.4V DO214AC

0

1.5KE100CAHR0G

1.5KE100CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO201

0

BZW04-70HR1G

BZW04-70HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO204AL

0

SMB10J11AHR5G

SMB10J11AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AA

0

1.5SMC100A M6G

1.5SMC100A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO214AB

0

1V5KE43A

1V5KE43A

TSC (Taiwan Semiconductor)

TRANS VOLTAGE SUPPRESSOR DIODE,

3213

P4SMA160A M2G

P4SMA160A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO214AC

0

P6KE36CAHA0G

P6KE36CAHA0G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO204AC

0

SMAJ70CA R3G

SMAJ70CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 70V 113V DO214AC

0

SMBJ110AHR5G

SMBJ110AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 110V 177V DO214AA

0

P6KE400AHR0G

P6KE400AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO204AC

0

P4KE15CA R1G

P4KE15CA R1G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top