TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMAJ78A R3G

SMAJ78A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AC

0

SMBJ6.0AHR5G

SMBJ6.0AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 6V 10.3V DO214AA

0

1.5SMC82CA V7G

1.5SMC82CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AB

0

SMBJ26A R5G

SMBJ26A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 26V 42.1V DO214AA

1485

P6KE400CA A0G

P6KE400CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO204AC

0

SMCJ54AHM6G

SMCJ54AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AB

0

SMCJ28CA V6G

SMCJ28CA V6G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

P6KE15CAHR0G

P6KE15CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO204AC

0

SMB10J20CAHR5G

SMB10J20CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 32.4V DO214AA

0

SMCJ13A V7G

SMCJ13A V7G

TSC (Taiwan Semiconductor)

TVS DIODE 13V 21.5V DO214AB

0

SMBJ14A

SMBJ14A

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AA

11696

1.5KE400CAHR0G

1.5KE400CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 342V 548V DO201

0

PGSMAJ13AHR3G

PGSMAJ13AHR3G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

1.5SMC39CA V7G

1.5SMC39CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 33.3V 53.9V DO214AB

0

SMAJ170AHR3G

SMAJ170AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 170V 275V DO214AC

3480

SMCJ7.0CA R7G

SMCJ7.0CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 7V 12V DO214AB

0

BZW04-154B R0G

BZW04-154B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 154V 246V DO204AL

0

SMDJ48CAHR7G

SMDJ48CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

SMAJ85AHM2G

SMAJ85AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 85V 137V DO214AC

0

P4SMA150A M2G

P4SMA150A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 128V 207V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top