TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1.5SMC30CA R7G

1.5SMC30CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 25.6V 41.4V DO214AB

0

P6SMB8.2CA R5G

P6SMB8.2CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO214AA

0

P6SMB220A R5G

P6SMB220A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 185V 328V DO214AA

0

SMBJ15AHM4G

SMBJ15AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AA

0

BZW04-48HR1G

BZW04-48HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 47.8V 77V DO204AL

0

P4SMA33CA R3G

P4SMA33CA R3G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AC

4790

5.0SMDJ75AHM6G

5.0SMDJ75AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 75V 121V DO214AB

0

PGSMAJ33CA E3G

PGSMAJ33CA E3G

TSC (Taiwan Semiconductor)

DIODE, TVS, BIDIRECTIONAL

3560

P6KE22A R0G

P6KE22A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 18.8V 30.6V DO204AC

0

SMDJ11A R7G

SMDJ11A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 11V 18.2V DO214AB

0

BZW04-85 R0G

BZW04-85 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 85.5V 137V DO204AL

0

SMCJ28CA V7G

SMCJ28CA V7G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

551

P6SMB36CAHM4G

P6SMB36CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 30.8V 49.9V DO214AA

0

P6KE24A R0G

P6KE24A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO204AC

0

1.5KE24CA R0G

1.5KE24CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO201

0

BZW04-13HR1G

BZW04-13HR1G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO204AL

0

1KSMB24CAHR5G

1KSMB24CAHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

SMCJ33A R7G

SMCJ33A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 33V 53.3V DO214AB

690

SA60CA A0G

SA60CA A0G

TSC (Taiwan Semiconductor)

TVS DIODE 60V 96.8V DO204AC

0

SMCJ18A R7G

SMCJ18A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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