TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1.5KE15A R0G

1.5KE15A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO201

0

P4KE9.1A R0G

P4KE9.1A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO204AL

0

P4SMA160CA M2G

P4SMA160CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 136V 219V DO214AC

0

PGSMAJ70A M2G

PGSMAJ70A M2G

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 400W

0

SMF48A RQG

SMF48A RQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

5.0SMDJ24A M6G

5.0SMDJ24A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AB

0

SMDJ15A V6G

SMDJ15A V6G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AB

0

SMF90A RVG

SMF90A RVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMCJ14AHR7G

SMCJ14AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AB

0

SMBJ90CA M4G

SMBJ90CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 90V 146V DO214AA

0

SMBJ15A M4G

SMBJ15A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 15V 24.4V DO214AA

0

1.5SMC15AHR7G

1.5SMC15AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO214AB

0

SMBJ78CAHM4G

SMBJ78CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 78V 126V DO214AA

0

P4KE11A R1G

P4KE11A R1G

TSC (Taiwan Semiconductor)

TVS DIODE 9.4V 15.6V DO204AL

0

SMCJ48AHM6G

SMCJ48AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

1.5KE68CA B0G

1.5KE68CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 58.1V 92V DO201

0

SMA4S43AH

SMA4S43AH

TSC (Taiwan Semiconductor)

400W, 10V - 70V, SMD TVS PG STRU

0

SMCJ12AHM6G

SMCJ12AHM6G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

P6KE110A R0G

P6KE110A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AC

0

P4SMA24A M2G

P4SMA24A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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