TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMF70AHRVG

SMF70AHRVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMCJ18CAHR7G

SMCJ18CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AB

0

SMBJ120A R5G

SMBJ120A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 120V 193V DO214AA

0

SMA6J20A M2G

SMA6J20A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 20V 31.4V DO214AC

0

P6SMB9.1CA M4G

P6SMB9.1CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO214AA

0

SA36AHR0G

SA36AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 36V 58.1V DO204AC

0

1V5KE130CA

1V5KE130CA

TSC (Taiwan Semiconductor)

TVS DIODE 111V 179V DO201AE

0

P6SMB7.5A M4G

P6SMB7.5A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 6.4V 11.3V DO214AA

0

BZW06-188 R0G

BZW06-188 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 188V 388V DO204AC

0

P6SMB51CA R5G

P6SMB51CA R5G

TSC (Taiwan Semiconductor)

TVS DIODE 43.6V 70.1V DO214AA

0

1.5SMC9.1A R7G

1.5SMC9.1A R7G

TSC (Taiwan Semiconductor)

TVS DIODE 7.78V 13.4V DO214AB

0

SMF10AHRQG

SMF10AHRQG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL, 200W

0

SMBJ6.5CAHM4G

SMBJ6.5CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 6.5V 11.2V DO214AA

0

P6SMB15CAHM4G

P6SMB15CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 12.8V 21.2V DO214AA

0

SMAJ24A R3G

SMAJ24A R3G

TSC (Taiwan Semiconductor)

TVS DIODE 24V 38.9V DO214AC

0

1.5SMC8.2AHR7G

1.5SMC8.2AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 7.02V 12.1V DO214AB

0

SMAJ18AHR3G

SMAJ18AHR3G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AC

3537

1.5SMC75CA R7G

1.5SMC75CA R7G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO214AB

0

1V5KE250A

1V5KE250A

TSC (Taiwan Semiconductor)

TRANS VOLTAGE SUPPRESSOR DIODE,

0

SMF14AHRVG

SMF14AHRVG

TSC (Taiwan Semiconductor)

DIODE, TVS, UNIDIRECTIONAL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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