TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1.5KE62A-E3/54

1.5KE62A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 53V 85V 1.5KE

1112

SMDJ30A-HRA

SMDJ30A-HRA

Wickmann / Littelfuse

TVS DIODE 30V 48.4V DO214AB

0

TV04A191J-G

TV04A191J-G

Comchip Technology

TVS DIODE 190V 307.8V SMA

0

5KP250A

5KP250A

Wickmann / Littelfuse

TVS DIODE 250V 425V P600

0

TV02W580-G

TV02W580-G

Comchip Technology

TVS DIODE 58V 93.6V SOD123

0

BZW50-68

BZW50-68

STMicroelectronics

TVS DIODE 68V 157V R-6

233

P4SMA8.2CA-E3/5A

P4SMA8.2CA-E3/5A

Vishay General Semiconductor – Diodes Division

TVS DIODE 7.02V 12.1V DO214AC

0

5.0SMDJ17CA-T7

5.0SMDJ17CA-T7

Wickmann / Littelfuse

TVS DIODE 17V 27.6V DO214AB

0

SMBJ58AQ-13-F

SMBJ58AQ-13-F

Zetex Semiconductors (Diodes Inc.)

TRANSIENT VOLTAGE SUPPRESSOR SMB

0

RSB5.6SMT2N

RSB5.6SMT2N

ROHM Semiconductor

TVS DIODE 2.5V EMD2

0

SMB10J14CAHM4G

SMB10J14CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 14V 23.2V DO214AA

0

CDSOD323-T15S

CDSOD323-T15S

J.W. Miller / Bourns

TVS DIODE 15V 30V SOD323

10919

MXLSMBG150AE3

MXLSMBG150AE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO215AA

0

5.0SMDJ26CA-QH

5.0SMDJ26CA-QH

J.W. Miller / Bourns

DIO TVS VWM 26V 5KW BIDIR SMC AE

0

1.5KE91A-T

1.5KE91A-T

Zetex Semiconductors (Diodes Inc.)

TVS DIODE 77.8V 125V DO201

0

5.0SMDJ14CA

5.0SMDJ14CA

J.W. Miller / Bourns

TVS DIODE 14V 23.2V DO214AB

5839

TVP06B7V5A-G

TVP06B7V5A-G

Comchip Technology

TVS DIODE 6.4V 11.3V SMB

0

MSMBG9.0AE3

MSMBG9.0AE3

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO215AA

65

SMAJ30CAQ-13-F

SMAJ30CAQ-13-F

Zetex Semiconductors (Diodes Inc.)

TRANSIENT VOLTAGE SUPPRESSOR,SMA

21163

ATV15C171JB-HF

ATV15C171JB-HF

Comchip Technology

TVS DIODE 170V 275V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
RFQ BOM Call Skype Email
Top