TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXSMBJ170CAE3

MXSMBJ170CAE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO214AA

0

SAC10-E3/73

SAC10-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 10V 16.3V DO204AC

0

AOZ8903CI

AOZ8903CI

Alpha and Omega Semiconductor, Inc.

TVS DIODE 5.5V 7V SOT23-6

0

1SMB14AT3G

1SMB14AT3G

TVS, 600W, 14V UNIDIRECTIONAL

54393

P6KE62CA-E3/73

P6KE62CA-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 53V 85V DO204AC

0

P4SMA82A M2G

P4SMA82A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AC

0

PESD5V0X2UAMYL

PESD5V0X2UAMYL

Nexperia

TVS DIODE 5V 14V DFN1006-3

0

SLD51-018

SLD51-018

Wickmann / Littelfuse

TVS DIODE 51V 82.4V P600

0

MAP4KE82A

MAP4KE82A

Roving Networks / Microchip Technology

TVS DIODE 70.1V 113V DO204AL

0

SMBJ6.5CA-HF

SMBJ6.5CA-HF

Comchip Technology

DIODE TVS 6.5V 600W SMB BI-DIR

0

ATV06B351JB-HF

ATV06B351JB-HF

Comchip Technology

TVS DIODE 350V 567V DO214AA

0

JANTX1N6141A

JANTX1N6141A

Roving Networks / Microchip Technology

TVS DIODE 6.9V 13.4V C AXIAL

0

BZT03C16-TAP

BZT03C16-TAP

Vishay General Semiconductor – Diodes Division

TVS DIODE 13V 22.9V SOD57

0

JANTXV1N6473

JANTXV1N6473

Roving Networks / Microchip Technology

TVS DIODE 24V 41.4V AXIAL

0

ATV50C121J-HF

ATV50C121J-HF

Comchip Technology

TVS DIODE 120V 193V DO214AB

0

TA6F8.2AHM3_A/H

TA6F8.2AHM3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 7.02V 12.1V DO221AC

0

SMBJ24AHE3_A/H

SMBJ24AHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

P6KE91

P6KE91

Wickmann / Littelfuse

TVS DIODE 77.8V 131.25V DO204AC

0

TGL34-150A

TGL34-150A

Diotec Semiconductor

TVS DO-213AA 128V 150W UNI

0

ATV50C351J-HF

ATV50C351J-HF

Comchip Technology

TVS DIODE 350V 567V DO214AB

999

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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