TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLSMBG90CA

MXLSMBG90CA

Roving Networks / Microchip Technology

TVS DIODE 90V 146V DO215AA

0

SMBJ51AHR5G

SMBJ51AHR5G

TSC (Taiwan Semiconductor)

TVS DIODE 51V 82.4V DO214AA

0

MXSMLJ28CAE3

MXSMLJ28CAE3

Roving Networks / Microchip Technology

TVS DIODE 28V 45.4V DO214AB

0

SMBJ60A-HRA

SMBJ60A-HRA

Wickmann / Littelfuse

TVS DIODE 60V 96.8V DO214AA

0

SM6T18A

SM6T18A

STMicroelectronics

TVS DIODE 15.3V 32.5V SMB

10999

SMC3K64CA-M3/9A

SMC3K64CA-M3/9A

Vishay General Semiconductor – Diodes Division

TVS DIODE 64V 103V DO214AB

0

SMCG130AHE3/9AT

SMCG130AHE3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 130V 209V DO215AB

0

MASMCJ17A

MASMCJ17A

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V DO214AB

0

824550101

824550101

Würth Elektronik Midcom

TVS DIODE 10V 17V DO214AB

0

MXSMLJ45AE3

MXSMLJ45AE3

Roving Networks / Microchip Technology

TVS DIODE 45V 72.7V DO214AB

0

SMBJ15CA-F1-0000HF

SMBJ15CA-F1-0000HF

TVS DIODE 15V 24.4V SMB

0

SMAJ5.0A-E3/61

SMAJ5.0A-E3/61

Vishay General Semiconductor – Diodes Division

TVS DIODE 5V 9.2V DO214AC

187785

SMCJ28AHR7G

SMCJ28AHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 28V 45.4V DO214AB

0

SMAJ85CA-TP

SMAJ85CA-TP

Micro Commercial Components (MCC)

TVS DIODE 85V 137V DO214AC

0

MXRT100KP200AE3

MXRT100KP200AE3

Roving Networks / Microchip Technology

TVS DIODE 200V 392V CASE 5A

0

MXRT100KP58AE3

MXRT100KP58AE3

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

SMPC28A-M3/87A

SMPC28A-M3/87A

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 45.4V TO277A

0

SA5.0A R0G

SA5.0A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 5V 9.2V DO204AC

0

P4KE13A

P4KE13A

Wickmann / Littelfuse

TVS DIODE 11.1V 18.2V DO204AL

0

824001

824001

Würth Elektronik Midcom

TVS DIODE 5V 9V SOT23-6L

627

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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