TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLP4KE9.1AE3

MXLP4KE9.1AE3

Roving Networks / Microchip Technology

TVS DIODE 7.78V 13.4V DO204AL

0

SMBJ30C

SMBJ30C

Meritek

TVS DIODE 30V 53.5V DO-214AA (SM

0

P6KE12CAHR0G

P6KE12CAHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO204AC

0

15KPA70ATR

15KPA70ATR

SMC Diode Solutions

TVS DIODE 70V 113.6V P600

0

SMCG130CA-E3/9AT

SMCG130CA-E3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 130V 209V DO215AB

0

1.5KE91CAHE3_A/C

1.5KE91CAHE3_A/C

Vishay General Semiconductor – Diodes Division

TVS DIODE 77.8V 125V 1.5KE

0

SMBJ16AHE3/5B

SMBJ16AHE3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 16V 26V DO214AA

11

PESD5Z5.0135

PESD5Z5.0135

NXP Semiconductors

TVS DIODE

0

MXLSMCJ130AE3

MXLSMCJ130AE3

Roving Networks / Microchip Technology

TVS DIODE 130V 209V DO214AB

0

SM6T18CA-E3/52

SM6T18CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 15.3V 25.2V DO214AA

1245

P6SMB6.8A-E3/5B

P6SMB6.8A-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 5.8V 10.5V DO214AA

1810

MASMBJ33CA

MASMBJ33CA

Roving Networks / Microchip Technology

TVS DIODE 33V 53.3V DO214AA

0

SZ1SMA36CAT3G

SZ1SMA36CAT3G

Wickmann / Littelfuse

TVS DIODE 36V 58.1V SMA

0

SLD18-018

SLD18-018

Wickmann / Littelfuse

TVS DIODE 18V 29.2V P600

0

SMBJ33CA-QH

SMBJ33CA-QH

J.W. Miller / Bourns

TVS DIODE 33V 53.3V SMB

0

SA130A A0G

SA130A A0G

TSC (Taiwan Semiconductor)

TVS DIODE 130V 209V DO204AC

0

SMBJP6KE200CA-TP

SMBJP6KE200CA-TP

Micro Commercial Components (MCC)

TVS DIODE 171V 274V DO214AA

3

P4SMA22A

P4SMA22A

Wickmann / Littelfuse

TVS DIODE 18.8V 30.6V DO214AC

0

TV02W171-G

TV02W171-G

Comchip Technology

TVS DIODE 170V 275V SOD123

0

P4KE6.8AHE3/73

P4KE6.8AHE3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 5.8V 10.5V DO204AL

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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