TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMCJ12A M6G

SMCJ12A M6G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AB

0

SMBJ15

SMBJ15

Meritek

TVS DIODE 15V 26.9V DO-214AA (SM

0

SMF10A-E3-08

SMF10A-E3-08

Vishay General Semiconductor – Diodes Division

TVS DIODE 10V 17V SMF

9970

SMF12A-F1-0000HF

SMF12A-F1-0000HF

TVS DIODE 12V 19.9V SOD-123FL

0

5-0SMDJ30CA

5-0SMDJ30CA

PowerStor (Eaton)

TVS DIODE 30V 48.4VC 5KW SMD

0

TP6KE13CA

TP6KE13CA

Wickmann / Littelfuse

TVS DIODE 11.1V 18.2V DO204AC

0

MXLSMCJ100CA

MXLSMCJ100CA

Roving Networks / Microchip Technology

TVS DIODE 100V 162V DO214AB

0

SMCJ16A-13-F

SMCJ16A-13-F

Zetex Semiconductors (Diodes Inc.)

TVS DIODE 16V 26V SMC

2750

MASMCJ58CAE3

MASMCJ58CAE3

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

P4KE220A-G

P4KE220A-G

Comchip Technology

TVS DIODE 185V 328V DO41

0

IP4387CX4/P,315

IP4387CX4/P,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

36000

SMCG43A-HRA

SMCG43A-HRA

Wickmann / Littelfuse

TVS DIODE 43V 69.4V DO215AB

0

MSMBJ150CAE3

MSMBJ150CAE3

Roving Networks / Microchip Technology

TVS DIODE 150V 243V DO214AA

0

1SMC90CA TR13 PBFREE

1SMC90CA TR13 PBFREE

Central Semiconductor

TVS DIODE 90VWM 146VC SMC

0

SMBJ58CAHE3_A/H

SMBJ58CAHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

SMCJ43CA

SMCJ43CA

Wickmann / Littelfuse

TVS DIODE 43V 69.4V DO214AB

2737

P4KE440CATR

P4KE440CATR

SMC Diode Solutions

TVS DIODE 376V 600V DO41

0

BZW04-64 R0G

BZW04-64 R0G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO204AL

0

SMF43AT1G

SMF43AT1G

TRANS VOLTAGE SUPPRESSOR DIODE

0

DF5A6.2CJE,LM

DF5A6.2CJE,LM

Toshiba Electronic Devices and Storage Corporation

TVS DIODE 5VWM ESV PAC

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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