TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SA9.0CAHE3/73

SA9.0CAHE3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 9V 15.4V DO204AC

0

ESDA6V1L

ESDA6V1L

STMicroelectronics

TVS DIODE 5.25V SOT23-3

22466

SMBJ60CA-E3/5B

SMBJ60CA-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 60V 96.8V DO214AA

0

SMC3K60CA-M3/57

SMC3K60CA-M3/57

Vishay General Semiconductor – Diodes Division

TVS DIODE 60V 96.8V DO214AB

0

STN254050UL50H

STN254050UL50H

PowerStor (Eaton)

TVS DIODE ESD DFN2510 5V 0.5 PF

1450

SMCJ150AHE3/57T

SMCJ150AHE3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 150V 243V DO214AB

0

MRT100KP58CA

MRT100KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 114V CASE 5A

0

SMBJ24

SMBJ24

Meritek

TVS DIODE 24V 43V DO-214AA (SMB)

0

TV15C6V5J-G

TV15C6V5J-G

Comchip Technology

TVS DIODE 6.5V 11.2V DO214AB

0

TV04A580J-HF

TV04A580J-HF

Comchip Technology

TVS DIODE 58V 93.6V SMA

0

SMCJ9.0CAHR7G

SMCJ9.0CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 9V 15.4V DO214AB

0

TPSMB120CA

TPSMB120CA

Wickmann / Littelfuse

TVS DIODE 102V 165V DO214AA

0

MSMCJ58CA

MSMCJ58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO214AB

0

P6SMB33A M4G

P6SMB33A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AA

0

CEZ8V2,L3F

CEZ8V2,L3F

Toshiba Electronic Devices and Storage Corporation

ZENER DIODE OVP VZ:8.2V PD:0.15W

0

SMCJ48CAHR7G

SMCJ48CAHR7G

TSC (Taiwan Semiconductor)

TVS DIODE 48V 77.4V DO214AB

0

SMB10J10A M4G

SMB10J10A M4G

TSC (Taiwan Semiconductor)

TVS DIODE 10V 17V DO214AA

0

TGL34-36C

TGL34-36C

Diotec Semiconductor

TVS DO-213AA 29.1V 150W BI

5000

P6SMB39AHE3_A/H

P6SMB39AHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

TV50C280J-G

TV50C280J-G

Comchip Technology

TVS DIODE 28V 45.4V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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