TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXSMLJ75AE3

MXSMLJ75AE3

Roving Networks / Microchip Technology

TVS DIODE 75V 121V DO214AB

0

SMBJ51CA-Q

SMBJ51CA-Q

J.W. Miller / Bourns

TVS DIODE 51V 82.4V SMB

2680

MAX13208EALB+T

MAX13208EALB+T

Maxim Integrated

TVS DIODE 10UDFN

3142

MXLSMLJ120CA

MXLSMLJ120CA

Roving Networks / Microchip Technology

TVS DIODE 120V 193V DO214AB

0

CMO5V0LC TR PBFREE

CMO5V0LC TR PBFREE

Central Semiconductor

TVS DIODE 5V 12V SOD523

45000

MXLSMCJ54CAE3

MXLSMCJ54CAE3

Roving Networks / Microchip Technology

TVS DIODE 54V 87.1V DO214AB

0

1.5KE43AG

1.5KE43AG

TVS DIODE 36.8V 59.3V DO201

31372

MXSMBG30A

MXSMBG30A

Roving Networks / Microchip Technology

TVS DIODE 30V 48.4V DO215AA

0

P4SMA350AHE3_ALL

P4SMA350AHE3_ALL

Vishay General Semiconductor – Diodes Division

TVS DIODE 300V 482V DO214AC

0

1.5KE27AHR0G

1.5KE27AHR0G

TSC (Taiwan Semiconductor)

TVS DIODE 23.1V 37.5V DO201

0

MRT100KP51CA

MRT100KP51CA

Roving Networks / Microchip Technology

TVS DIODE 51V 101V CASE 5A

0

30KPA216CA

30KPA216CA

Wickmann / Littelfuse

TVS DIODE 216V 348.6V P600

774

SMDJ8.5CA-HRAT7

SMDJ8.5CA-HRAT7

Wickmann / Littelfuse

TVS DIODE 8.5V 14.4V DO214AB

0

P4KE200A-B

P4KE200A-B

Wickmann / Littelfuse

TVS DIODE 171V 274V DO204AL

0

SMBJ8.5CA-E3/5B

SMBJ8.5CA-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 8.5V 14.4V DO214AA

0

P6SMBJ78

P6SMBJ78

Diotec Semiconductor

TVS SMB 78V 600W UNI

0

MA15KP200CA

MA15KP200CA

Roving Networks / Microchip Technology

TVS DIODE 200V 322V DO204AR

0

30KPA280-B

30KPA280-B

Wickmann / Littelfuse

TVS DIODE 280V 487.2V P600

0

SMBJ18A/TR13

SMBJ18A/TR13

Yageo

TVS DIODE

0

SMCJ110CA-M3/9AT

SMCJ110CA-M3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 110V 177V DO214AB

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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