TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MXLSMBJ6.0A

MXLSMBJ6.0A

Roving Networks / Microchip Technology

TVS DIODE 6V 10.3V DO214AA

0

SMBG20CA-E3/52

SMBG20CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 20V 32.4V DO215AA

0

PESD3USB3B/CX

PESD3USB3B/CX

Nexperia

TVS DIODE 4V 3.7V DSN0603-2

4191

P4SMA33CAHE3_A/H

P4SMA33CAHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

SMAJ54ATR

SMAJ54ATR

SMC Diode Solutions

TVS DIODE 54V 87.1V SMA

0

SMP28A-M3/85A

SMP28A-M3/85A

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 45.4V DO220AA

9839

SMLJ28CA-Q

SMLJ28CA-Q

J.W. Miller / Bourns

TVS DIODE 28V 45.4V SMC

0

1KSMB12CA M4G

1KSMB12CA M4G

TSC (Taiwan Semiconductor)

TVS DIODE 10.2V 16.7V DO214AA

0

1.5SMCJ85

1.5SMCJ85

Diotec Semiconductor

TVS SMC 85V 1500W UNI

0

BZW04-19-E3/54

BZW04-19-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 18.8V 30.6V DO204AL

0

SMFE45CA

SMFE45CA

PowerStor (Eaton)

TVS DIODE 45V 200W SOD123F

0

SMF200A-F1-3000HF

SMF200A-F1-3000HF

TVS DIODE 200V 324V SOD-123FL

0

1.5SMC43A TR13 PBFREE

1.5SMC43A TR13 PBFREE

Central Semiconductor

TVS DIODE 36.8VWM 59.3VC SMC

0

P6SMB56AT3G

P6SMB56AT3G

TRANS VOLTAGE SUPPRESSOR DIODE

0

P6SMB36CA-M3/5B

P6SMB36CA-M3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 30.8V 49.9V DO214AA

0

SMC30J6.5A

SMC30J6.5A

STMicroelectronics

TVS DIODE 6.5V 11.2V SMC

0

SMCJ33C

SMCJ33C

Meritek

TVS DIODE 33V 59V DO-214AB (SMC)

0

1.5KE82CAHE3_A/C

1.5KE82CAHE3_A/C

Vishay General Semiconductor – Diodes Division

TVS DIODE 70.1V 113V 1.5KE

0

MX15KP75AE3

MX15KP75AE3

Roving Networks / Microchip Technology

TVS DIODE 75V 122V CASE 5A

0

CM1248-08DE

CM1248-08DE

TRANS VOLTAGE SUPPRESSOR DIODE,

3602497

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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