TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
5.0SMDJ20CA

5.0SMDJ20CA

J.W. Miller / Bourns

TVS DIODE 20V 32.4V DO214AB

888

SMBJ16A-HRA

SMBJ16A-HRA

Wickmann / Littelfuse

TVS DIODE 16V 26V DO214AA

0

SMF4L40A

SMF4L40A

Wickmann / Littelfuse

TVS DIODE 40V 64.5V SOD123FL

2740

TGL41-6.8A-E3/96

TGL41-6.8A-E3/96

Vishay General Semiconductor – Diodes Division

TVS DIODE 5.8V 10.5V DO213AB

7534

P4SMAJ60A-AQ

P4SMAJ60A-AQ

Diotec Semiconductor

TVS SMA 60V 400W UNI

0

SMCG150A-M3/9AT

SMCG150A-M3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 150V 243V DO215AB

0

SMBJ51A-E3/5B

SMBJ51A-E3/5B

Vishay General Semiconductor – Diodes Division

TVS DIODE 51V 82.4V DO214AA

0

5KP5.0A

5KP5.0A

Wickmann / Littelfuse

TVS DIODE 5V 9.2V P600

3299

P4KE20CAHE3/54

P4KE20CAHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 17.1V 27.7V DO204AL

0

824521361

824521361

Würth Elektronik Midcom

TVS DIODE 36V 58.1V DO214AA

975

MPLAD15KP17CAE3

MPLAD15KP17CAE3

Roving Networks / Microchip Technology

TVS DIODE 17V 27.6V PLAD

0

5.0SMDJ7.0CA-Q

5.0SMDJ7.0CA-Q

J.W. Miller / Bourns

TVS DIODE

0

P6SMB39AHM3_A/H

P6SMB39AHM3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AA

0

BZW04-256B R0G

BZW04-256B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 256V 414V DO204AL

0

SMB8J12CA-E3/52

SMB8J12CA-E3/52

Vishay General Semiconductor – Diodes Division

TVS DIODE 12V 19.9V DO214AA

0

ICTE5-E3/51

ICTE5-E3/51

Vishay General Semiconductor – Diodes Division

TVS DIODE 5V 7.5V 1.5KE

1023

SMBJ5.0D-M3/I

SMBJ5.0D-M3/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 5V 9.1V DO214AA

9370

1SMC24AT3G

1SMC24AT3G

Wickmann / Littelfuse

TVS DIODE 24V 38.9V SMC

0

SA8.0A-E3/54

SA8.0A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 8V 13.6V DO204AC

1697

P6SMB82AHM4G

P6SMB82AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 70.1V 113V DO214AA

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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