TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
1SMC58CA BK PBFREE

1SMC58CA BK PBFREE

Central Semiconductor

TVS DIODE 58V 93.6V SMC

0

MXSMLJ14CAE3

MXSMLJ14CAE3

Roving Networks / Microchip Technology

TVS DIODE 14V 23.2V DO214AB

0

15KPE85CA

15KPE85CA

PowerStor (Eaton)

TVS DIODE 85V 137.6VC 15KW AXL

0

JAN1N6148A

JAN1N6148A

Roving Networks / Microchip Technology

TVS DIODE 13.7V 25.1V C AXIAL

0

1.5KE100A-E3/51

1.5KE100A-E3/51

Vishay General Semiconductor – Diodes Division

TVS DIODE 85.5V 137V 1.5KE

0

P4KE110A R0G

P4KE110A R0G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO204AL

0

1SMB70AT3G

1SMB70AT3G

TVS, 600W, 70V UNIDIRECTIONAL

235582

BZW04-5V8-E3/73

BZW04-5V8-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 5.8V 10.5V DO204AL

0

MSMLJ60A

MSMLJ60A

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V DO214AB

0

SMDA24C/TR13

SMDA24C/TR13

Roving Networks / Microchip Technology

TVS DIODE 24V 43V 8SO

0

SMDA05-7TR

SMDA05-7TR

SMC Diode Solutions

TVS DIODE 5V 9.8V 8SO

4835

A5KP250CA-G

A5KP250CA-G

Comchip Technology

TVS DIODE 250V 405V R-6

0

824551481

824551481

Würth Elektronik Midcom

WE-TVSP POWER TVS DIODE SIZE DO-

0

MASMBG8.0AE3

MASMBG8.0AE3

Roving Networks / Microchip Technology

TVS DIODE 8V 13.6V DO215AA

0

1.5KE550A-B

1.5KE550A-B

Wickmann / Littelfuse

TVS DIODE 468V 760V DO201

0

P4SMA170CA M2G

P4SMA170CA M2G

TSC (Taiwan Semiconductor)

TVS DIODE 145V 234V DO214AC

0

P6SMB110AHM4G

P6SMB110AHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 94V 152V DO214AA

0

SMDB24LCCTR

SMDB24LCCTR

SMC Diode Solutions

TVS DIODE 24V 43V 8SO

1149

3KASMC24AHE3_B/I

3KASMC24AHE3_B/I

Vishay General Semiconductor – Diodes Division

TVS DIODE 24V 38.9V DO214AB

0

ESDLIN03-1BWY

ESDLIN03-1BWY

STMicroelectronics

TVS DIODE 26.5V 44V SOT323-3

5284

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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