TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
MAP4KE220CA

MAP4KE220CA

Roving Networks / Microchip Technology

TVS DIODE 185V 328V DO204AL

0

SMCJ24CA-M3/9AT

SMCJ24CA-M3/9AT

Vishay General Semiconductor – Diodes Division

TVS DIODE 24V 38.9V DO214AB

0

SMA6J28A-E3/61

SMA6J28A-E3/61

Vishay General Semiconductor – Diodes Division

TVS DIODE 28V 51.6V DO214AC

0

JANTXV1N6122AUS

JANTXV1N6122AUS

Roving Networks / Microchip Technology

TVS DIODE 35.8V 64.6V B SQ-MELF

0

3SMC28CA TR13 PBFREE

3SMC28CA TR13 PBFREE

Central Semiconductor

TVS DIODE 28V 45.4V SMC

2540

SMAJ54AHM2G

SMAJ54AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 54V 87.1V DO214AC

0

P4KE9.1CA-E3/73

P4KE9.1CA-E3/73

Vishay General Semiconductor – Diodes Division

TVS DIODE 7.78V 13.4V DO204AL

0

1.5KE7.5AHE3_A/C

1.5KE7.5AHE3_A/C

Vishay General Semiconductor – Diodes Division

TVS DIODE 6.4V 11.3V 1.5KE

0

BYZ35A27

BYZ35A27

Diotec Semiconductor

TVS D13X10.7W 21.8V 5000W UNI

0

5KP43A-HRA

5KP43A-HRA

Wickmann / Littelfuse

TVS DIODE 43V 69.4V P600

0

SMAJ24AHM3_A/H

SMAJ24AHM3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE DO214AC

0

CD214A-T60CALF

CD214A-T60CALF

J.W. Miller / Bourns

TVS DIODE 60V 96.8V SMA

0

P4KE120A

P4KE120A

Wickmann / Littelfuse

TVS DIODE 102V 165V DO204AL

0

MSMBJ12A

MSMBJ12A

Roving Networks / Microchip Technology

TVS DIODE 12V 19.9V DO214AA

0

TPSMB27AHE3_A/H

TPSMB27AHE3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 23.1V 37.5V DO214AA

0

ESD204B102ELE6327XTMA1

ESD204B102ELE6327XTMA1

IR (Infineon Technologies)

TVS DIODE 14V 28V TSLP-2-20

288

SMAJ9.0AE3/TR13

SMAJ9.0AE3/TR13

Roving Networks / Microchip Technology

TVS DIODE 9V 15.4V DO214AC

0

1.5KE75CA B0G

1.5KE75CA B0G

TSC (Taiwan Semiconductor)

TVS DIODE 64.1V 103V DO201

0

ATV50C240JB-HF

ATV50C240JB-HF

Comchip Technology

TVS DIODE 24V 38.9V DO214AB

81556000

ATV06A280JB-HF

ATV06A280JB-HF

Comchip Technology

AUTOMOTIVE TVS DIODE 600W 28V BI

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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