TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
A5KP90A-G

A5KP90A-G

Comchip Technology

TVS DIODE 90V 146V R-6

0

MA5KP58CA

MA5KP58CA

Roving Networks / Microchip Technology

TVS DIODE 58V 93.6V DO204AR

0

BZW06-20B R0G

BZW06-20B R0G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 42.8V DO204AC

0

SP3522-01UTG

SP3522-01UTG

Wickmann / Littelfuse

TVS DIODE 7V 14.5V 0201/DFN0603

11154

IP4221CZ6-XS,132

IP4221CZ6-XS,132

Nexperia

TVS DIODE 5.5V 6XSON SOT891

0

SMBJ24A-Q

SMBJ24A-Q

J.W. Miller / Bourns

TVS DIODE 24V 38.9V SMB

0

MART100KP64AE3

MART100KP64AE3

Roving Networks / Microchip Technology

TVS DIODE 64V 126V CASE 5A

0

SMB10J18A R5G

SMB10J18A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 18V 29.2V DO214AA

781

ESDAXLC6-1BT2Y

ESDAXLC6-1BT2Y

STMicroelectronics

TVS DIODE 3V 37V SOD882T

0

SM15T18CAY

SM15T18CAY

STMicroelectronics

TVS DIODE 15.3V 32.5V SMC

59

M5KP36AE3

M5KP36AE3

Roving Networks / Microchip Technology

TVS DIODE 36V 58.1V DO204AR

0

1SMC22CA TR13 PBFREE

1SMC22CA TR13 PBFREE

Central Semiconductor

TVS DIODE 22VWM 35.5VC SMC

0

IP4284CZ10-TB,115

IP4284CZ10-TB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

332742

5-0SMDJ54CA

5-0SMDJ54CA

PowerStor (Eaton)

TVS DIODE 54V 87.1VC 5KW SMD

0

SMCJ220CA

SMCJ220CA

J.W. Miller / Bourns

TVS DIODE 220V 356V SMC

14349

15KPE120A

15KPE120A

PowerStor (Eaton)

TVS DIODE 120V 192.3VC 15KW AXL

0

P4SMAJ7.0C

P4SMAJ7.0C

Diotec Semiconductor

TVS SMA 7V 400W BI

0

TPSMB17CA-VR

TPSMB17CA-VR

Wickmann / Littelfuse

TVS SURF MT DO214AA AEQ101 TR

0

1SMB6.0A TR13 PBFREE

1SMB6.0A TR13 PBFREE

Central Semiconductor

TVS DIODE 6V 10.3V SMB

911

MA15KP170AE3

MA15KP170AE3

Roving Networks / Microchip Technology

TVS DIODE 170V 275V DO204AR

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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