TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMAJ40CA

SMAJ40CA

Wickmann / Littelfuse

TVS DIODE 40V 64.5V DO214AC

8917

MAP4KE300AE3

MAP4KE300AE3

Roving Networks / Microchip Technology

TVS DIODE 256V 414V DO204AL

0

MPLAD15KP60CA

MPLAD15KP60CA

Roving Networks / Microchip Technology

TVS DIODE 60V 96.8V PLAD

0

P6KE6.8CA R0G

P6KE6.8CA R0G

TSC (Taiwan Semiconductor)

TVS DIODE 5.8V 10.5V DO204AC

0

P6SMB47CAT3

P6SMB47CAT3

TRANS VOLTAGE SUPPRESSOR DIODE

24250

SZ1SMA15CAT3G

SZ1SMA15CAT3G

Wickmann / Littelfuse

TVS DIODE 15V 24.4V SMA

24858

MXP4KE350AE3

MXP4KE350AE3

Roving Networks / Microchip Technology

TVS DIODE 300V 482V DO204AL

0

SA22AHE3/54

SA22AHE3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 22V 35.5V DO204AC

0

LDP01-28AY

LDP01-28AY

STMicroelectronics

TVS DIODE 24V 40V D2PAK

0

ESDA8P80-1U1M

ESDA8P80-1U1M

STMicroelectronics

TVS DIODE 6.3V 13.2V 1610

0

3SMC36A TR13 PBFREE

3SMC36A TR13 PBFREE

Central Semiconductor

TVS DIODE 36V 58.1V SMC

261327000

SMCJ58

SMCJ58

Meritek

TVS DIODE 58V 103V DO-214AB (SMC

0

S43LCC0403TR

S43LCC0403TR

SMC Diode Solutions

TVS DIODE 3.3V 8V SOT143

448

1KSMB33CAHM4G

1KSMB33CAHM4G

TSC (Taiwan Semiconductor)

TVS DIODE 28.2V 45.7V DO214AA

0

DFLT27A-7

DFLT27A-7

Zetex Semiconductors (Diodes Inc.)

TVS DIODE 27V 43.7V POWERDI 123

49308

SP4322-01ETG

SP4322-01ETG

Wickmann / Littelfuse

TVS DIODE BI-DIR 5V 11A SOD882

743

NUP5120X6T1G

NUP5120X6T1G

Sanyo Semiconductor/ON Semiconductor

TVS DIODE 5V SOT563

4363

P6KE540A-E3/54

P6KE540A-E3/54

Vishay General Semiconductor – Diodes Division

TVS DIODE 459V 740V DO204AC

3885

P6SMB8.2CA-Q

P6SMB8.2CA-Q

J.W. Miller / Bourns

TVS DIODE AECQ

0

5KP20CA-HRA

5KP20CA-HRA

Wickmann / Littelfuse

TVS DIODE 20V 32.4V P600

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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