TVS - Diodes

Image Part Number Description / PDF Quantity Rfq
SMF4L14A

SMF4L14A

Wickmann / Littelfuse

TVS DIODE 14V 23.2V SOD123FL

0

1KSMB24A R5G

1KSMB24A R5G

TSC (Taiwan Semiconductor)

TVS DIODE 20.5V 33.2V DO214AA

0

MXLSMBJ48CA

MXLSMBJ48CA

Roving Networks / Microchip Technology

TVS DIODE 48V 77.4V DO214AA

0

TPSMP15AHM3_A/H

TPSMP15AHM3_A/H

Vishay General Semiconductor – Diodes Division

TVS DIODE 12.8V 21.2V DO220AA

0

PESD12VA-SFYL

PESD12VA-SFYL

Nexperia

TVS DIODE 12V 30V DSN0603-2

631

MXL5KP7.0AE3

MXL5KP7.0AE3

Roving Networks / Microchip Technology

TVS DIODE 7V 12V CASE 5A

0

TGL41-18A-E3/96

TGL41-18A-E3/96

Vishay General Semiconductor – Diodes Division

TVS DIODE 15.3V 25.2V DO213AB

1270

SMAJ110CA-E3/5A

SMAJ110CA-E3/5A

Vishay General Semiconductor – Diodes Division

TVS DIODE 110V 177V DO214AC

0

SMDJ8.0A-T7

SMDJ8.0A-T7

Wickmann / Littelfuse

TVS DIODE 8V 13.6V DO214AB

0

VESD03A2-03GHG3-08

VESD03A2-03GHG3-08

Vishay General Semiconductor – Diodes Division

TVS DIODE SOT-323

2746

SLD5S16A

SLD5S16A

Wickmann / Littelfuse

TVS DIODE 3600W UNI SMTO-263 16V

500

SMDJ14A-HR

SMDJ14A-HR

Wickmann / Littelfuse

TVS DIODE 14V 23.2V DO214AB

0

SMCG54CAHE3/57T

SMCG54CAHE3/57T

Vishay General Semiconductor – Diodes Division

TVS DIODE 54V 87.1V DO215AB

0

TPD6E004RSER

TPD6E004RSER

Texas Instruments

TVS DIODE 5.5V 8UQFN

44499

SMAJ12A M2G

SMAJ12A M2G

TSC (Taiwan Semiconductor)

TVS DIODE 12V 19.9V DO214AC

0

SMBJE7-5CA

SMBJE7-5CA

PowerStor (Eaton)

TVS DIODE 7.5V 12.9VC 600W SMBJ

0

SESD5V0V1BLA

SESD5V0V1BLA

SMC Diode Solutions

DIODE ESD 5V BIDIRECTIONAL DFN10

0

SMAJ40AHM2G

SMAJ40AHM2G

TSC (Taiwan Semiconductor)

TVS DIODE 40V 64.5V DO214AC

0

ATV30C251JB-HF

ATV30C251JB-HF

Comchip Technology

TVS DIODE 250V 405V DO214AB

0

VCAN26A2-03S-E3-18

VCAN26A2-03S-E3-18

Vishay General Semiconductor – Diodes Division

TVS DIODE 26.5V 50V SOT23

0

TVS - Diodes

1. Overview

Transient Voltage Suppression (TVS) Diodes are semiconductor devices designed to protect sensitive electronics from voltage spikes caused by ESD (electrostatic discharge), lightning, or switching events. By clamping transient voltages to safe levels, TVS diodes ensure circuit reliability in modern electronic systems. Their fast response time (<1ps) and low clamping voltage make them critical components in high-speed data lines, power supplies, and automotive electronics.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional TVSSingle-polarity protection, asymmetrical voltage responseDC power lines, automotive systems
Bidirectional TVSSymmetrical protection for AC signalsTelecom interfaces (e.g., RJ45), USB 3.0 Multichannel TVSMultiple protection paths in single packageHDMI ports, DisplayPort interfaces Automotive TVSAEC-Q101 qualified, high surge capabilityECU modules, CAN bus protection

3. Structure and Composition

TVS diodes utilize a PN junction semiconductor structure with optimized doping profiles. Key components include:

  • Silicon epitaxial layer for precise voltage control
  • Passivation layer (SiO2/Nitride) to reduce leakage current
  • Backside metallization for low-inductance packaging
  • DO-214, SOD-123, or WCSP packaging variants

4. Key Technical Specifications

ParameterDescriptionImportance
Breakdown Voltage (Vbr)Minimum voltage where TVS activatesDetermines protection threshold
Clamping Voltage (Vc)Max voltage during transient eventMust be below protected IC's max rating
Peak Pulse Current (Ipp)Maximum surge current handlingDefines robustness against large transients
Response Time (tresp)Time to switch from off to on stateCrucial for ESD protection (typically <1ps)
Leakage Current (Ir)Off-state current at working voltageImpacts power efficiency

5. Application Areas

Major industries and typical equipment:

  • Telecommunications: 5G base stations, optical transceivers
  • Automotive: CAN/LIN bus protection, ADAS sensors
  • Industrial: PLCs, motor drives
  • Consumer Electronics: USB Type-C interfaces, Wi-Fi modules
  • Renewable Energy: Solar inverters, wind turbine controllers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
LittelfuseSP301x SeriesUSB 3.1 Gen2 protection, 0.35pF capacitance
ON SemiconductorNUP410606-channel ESD protection, 30kV HBM
STMicroelectronicsESDA8401Automotive-grade, 150A surge rating
InfineonESD320Single-line protection, 0.25pF for HDMI 2.1

7. Selection Guidelines

Key considerations:

  • Operating voltage must be below Vbr (typically 1.1 Voper)
  • Clamping voltage should stay under protected IC's maximum ratings
  • Packaging selection based on board space and thermal requirements
  • Environmental factors: temperature range, humidity resistance
  • Compliance with standards (IEC 61000-4-2, ISO 10605)

Example: For a 12V automotive circuit, select a bidirectional TVS with Vbr=15V, Vc<30V, and Ipp>50A to handle load dump events.

8. Industry Trends

Key development directions:

  • Miniaturization: 0201 package (0.6 0.3mm) for mobile devices
  • Integration: Combo devices with filters and shielding
  • Higher robustness: 40kV+ ESD protection for industrial IoT
  • Advanced materials: Silicon carbide (SiC) for high-temperature applications
  • AI-driven selection tools for optimized component matching
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