Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
BPX 61

BPX 61

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM TO39-2

601

BPW 34 S-Z

BPW 34 S-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 2SMD GW

0

BPW83

BPW83

Vishay / Semiconductor - Opto Division

PHOTODIODE 350 TO 1120 NM

3217

MICROFC-10010-SMT-TR1

MICROFC-10010-SMT-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

324

MTAPD-06-015

MTAPD-06-015

Marktech Optoelectronics

SENSOR PHOTODIODE 905NM TO46-3

0

197-70-72-591

197-70-72-591

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 830NM TO66

0

C30737MH-500-90C

C30737MH-500-90C

Excelitas Technologies

500UM SI APD IN FR4 SMD 900NM

0

MTAPD-06-009

MTAPD-06-009

Marktech Optoelectronics

SENSOR PHOTODIODE 905NM TO46-2

10

BPD-BQDA34-RR

BPD-BQDA34-RR

American Bright

SENSOR PHOTODIODE RADIAL

18914

PDB-V601-1-25

PDB-V601-1-25

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM RECT

9

ODD-42WB

ODD-42WB

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO8

139

NJL6195R-TE1

NJL6195R-TE1

New Japan Radio (NJR)

PHOTO DIODE

2498

039-121-011

039-121-011

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE 10V 1MM TO46

0

PD15-22C/TR8

PD15-22C/TR8

Everlight Electronics

SENSOR PHOTODIODE 940NM 4SMD

19845

380-23-21-051

380-23-21-051

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

0

SFH 229

SFH 229

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 860NM RADIAL

0

113-24-21-021

113-24-21-021

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM

442

OPR2100HST

OPR2100HST

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMCC

0

AM2520PD1BT03

AM2520PD1BT03

Kingbright

SENSOR PHOTODIODE 940NM 2SMD GW

1888

NTE30050

NTE30050

NTE Electronics, Inc.

PHOTODIODE 900NM ID-30NA

1973

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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