Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
019-141-411-B

019-141-411-B

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE BLUE MICRO SMT

1682

MTPD2600-100

MTPD2600-100

Marktech Optoelectronics

SENSOR PHOTODIODE 2600NM TO46-3

48

BPV23FL

BPV23FL

Vishay / Semiconductor - Opto Division

PHOTODIODE 790 TO 1050 NM

3770

VEMD10940F

VEMD10940F

Vishay / Semiconductor - Opto Division

PHOTODIODE 790 TO 1050 NM

21804

VTB8440BH

VTB8440BH

Excelitas Technologies

SENSOR PHOTODIODE 580NM RADIAL

1398

200-11-31-241

200-11-31-241

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

0

SFH 203 PFA

SFH 203 PFA

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM RADIAL

3200

EAPDSZ4439A4

EAPDSZ4439A4

Everlight Electronics

SENSOR PHOTODIODE 940NM 2SMD GW

2922

MTPD1346D-300

MTPD1346D-300

Marktech Optoelectronics

SENSOR PHOTODIODE 1700NM TO39-3

61

012-UVA-011

012-UVA-011

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV 220-370NM TO46

0

OPF422

OPF422

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM TO46

3247

BPW21R

BPW21R

Vishay / Semiconductor - Opto Division

SENSOR PHOTODIODE 565NM RADIAL

500

LTR-546AD

LTR-546AD

Lite-On, Inc.

SENSOR PHOTODIODE 900NM RADIAL

0

OP954

OP954

TT Electronics / Optek Technology

SENSOR PHOTODIODE 850NM SIDE

1461

BPV22NF

BPV22NF

Vishay / Semiconductor - Opto Division

PHOTODIODE 780 TO 1050 NM

0

MTAPD-06-003

MTAPD-06-003

Marktech Optoelectronics

SENSOR PHOTODIODE 800NM TO46-3

44

MTPD1346D-100

MTPD1346D-100

Marktech Optoelectronics

SENSOR PHOTODIODE 1300NM TO46-3

431

MICROFC-30035-SMT-TR

MICROFC-30035-SMT-TR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

TEMD5010X01

TEMD5010X01

Vishay / Semiconductor - Opto Division

PHOTODIODE 350 TO 1120 NM

1041

PIN-10DF

PIN-10DF

OSI Optoelectronics

100 MM SQ. 450-950NM FLAT RESPON

48

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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