Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
GUVC-T20GD-U

GUVC-T20GD-U

Genicom

UV-C SENSOR (220-280NM)

32

AXUV20ELG

AXUV20ELG

Opto Diode Corporation

SENSOR ELECTRON DETECTION 3MM

0

SD012-151-011

SD012-151-011

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE 800-1700NM .3MM TO46

305

019-141-411-R

019-141-411-R

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE RED MICRO SMT

9598

GUVC-T10GD-L

GUVC-T10GD-L

Genicom

UV-C SENSOR (220-280NM)

22

QSB34ZR

QSB34ZR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 940NM 2SMD

7

SFH 2400FA-Z

SFH 2400FA-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM 3SMD GW

74301

GUVB-S11SD

GUVB-S11SD

Genicom

UV-B SENSOR (240-320) /SMD3528

1391

PDI-C172SMF

PDI-C172SMF

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 900NM 2SMD

0

MICRORB-10020-MLP-TR1

MICRORB-10020-MLP-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 905NM 4SMD

33

MICROFJ-30020-TSV-TR1

MICROFJ-30020-TSV-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 8WBGA

0

PDB-C601-1-25

PDB-C601-1-25

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM RECT

0

008-2171-112

008-2171-112

Luna Optoelectronics (Advanced Photonix)

UV-C SENSOR, ALGAN, TO-46

150

GUVC-T10GD

GUVC-T10GD

Genicom

UV-C SENSOR (220-280) /TO46 / A

225

PDB-C609-2

PDB-C609-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM PVC WIRE

457

VTP8350H

VTP8350H

Excelitas Technologies

SENSOR PHOTODIODE 940NM 2DIP MOD

499

VTB8441BH

VTB8441BH

Excelitas Technologies

SENSOR PHOTODIODE 580NM 2DIP MOD

1160

EPC330-CSP32-001

EPC330-CSP32-001

ESPROS Photonics AG

SENSOR 16 PHOTODIODES 850NM

0

AFBR-S4N44P163

AFBR-S4N44P163

Broadcom

SENSOR PHOTODIODE 420NM ARRAY

74

PDB-C615-2

PDB-C615-2

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM PVC WIRE

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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