Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDU-V114

PDU-V114

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO5

0

C30737LH-230-80A

C30737LH-230-80A

Excelitas Technologies

SENSOR PHOTODIODE 800NM 6CLCC

24

VTP1188SH

VTP1188SH

Excelitas Technologies

SENSOR PHOTODIODE 925NM RADIAL

1000

MICROFC-60035-SMT-TR

MICROFC-60035-SMT-TR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

EPC320-CSP16-001

EPC320-CSP16-001

ESPROS Photonics AG

SENSOR 8 PHOTODIODES 850NM

0

MTD5052N

MTD5052N

Marktech Optoelectronics

SENSOR PHOTODIODE 525NM TO18

1107

ODD-8SMD

ODD-8SMD

Opto Diode Corporation

SENSOR PHOTODIODE 940NM LOCAP

2970

SFH 2716

SFH 2716

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 620NM 0805

8531

VBPW34FASR

VBPW34FASR

Vishay / Semiconductor - Opto Division

PHOTODIODE 780 TO 1050 NM

27225

MTD5010W

MTD5010W

Marktech Optoelectronics

SENSOR PHOTODIODE 850NM TO18

346

1541141ECA570

1541141ECA570

Würth Elektronik Midcom

SENSOR PHOTODIODE 940NM 2SMD

2566

MTD5052W

MTD5052W

Marktech Optoelectronics

SENSOR PHOTODIODE 525NM TO18

367

MT03-004

MT03-004

Marktech Optoelectronics

SENSOR PHOTODIODE 940NM TO5

26

UVG12

UVG12

Opto Diode Corporation

PHOTODIODE UV 4.1MM

0

MICROFC-10035-SMT-TR

MICROFC-10035-SMT-TR

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

ODD-5WBISOL

ODD-5WBISOL

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO5

38

KOM 2125-Z

KOM 2125-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 850NM 3SMD GW

0

ODD-1WB

ODD-1WB

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO18

1311

PDB-C203

PDB-C203

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO5

0

HSDL-5400#011

HSDL-5400#011

Lite-On, Inc.

SENSOR PHOTODIODE 875NM 2SMD GW

0

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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