Optical Sensors - Photodiodes

Image Part Number Description / PDF Quantity Rfq
PDB-V113

PDB-V113

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM RADIAL

0

PD1503-3B/L2

PD1503-3B/L2

Everlight Electronics

5MM PHOTODIODE

1668

PDB-C601-1

PDB-C601-1

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 940NM RECT

0

MICROFC-60035-SMT-TR1

MICROFC-60035-SMT-TR1

Sanyo Semiconductor/ON Semiconductor

SENSOR PHOTODIODE 420NM 4SMD

0

012-UVB-011

012-UVB-011

Luna Optoelectronics (Advanced Photonix)

PHOTODIODE UV 220-320NM TO46

0

OPF472

OPF472

TT Electronics / Optek Technology

SENSOR PHOTODIODE 880NM TO18

95

HSDL-5420#011

HSDL-5420#011

Lite-On, Inc.

SENSOR PHOTODIODE 875NM 2SMD GW

6

WP7113PD1C

WP7113PD1C

Kingbright

SENSOR PHOTODIODE 940NM RADIAL

633

SFH 2430-Z

SFH 2430-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 570NM 2SMD GW

7458

ODD-1W

ODD-1W

Opto Diode Corporation

SENSOR PHOTODIODE 940NM TO18

66

GUVC-T10GM-LA

GUVC-T10GM-LA

Genicom

UV SENSOR MODULE UV-C

46

PDB-V104

PDB-V104

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 950NM TO46-2

0

MTAPD-06-008

MTAPD-06-008

Marktech Optoelectronics

SENSOR PHOTODIODE 800NM TO46-3

0

OPR2100T

OPR2100T

TT Electronics / Optek Technology

SENSOR PHOTODIODE 890NM SMCC

225

SFH 2400-Z

SFH 2400-Z

OSRAM Opto Semiconductors, Inc.

SENSOR PHOTODIODE 900NM 3SMD GW

3621

TEMD7000X01

TEMD7000X01

Vishay / Semiconductor - Opto Division

PHOTODIODE 700 TO 1070 NM

264792

OP906

OP906

TT Electronics / Optek Technology

SENSOR PHOTODIODE 935NM

337

290-11-31-241

290-11-31-241

Luna Optoelectronics (Advanced Photonix)

SENSOR PHOTODIODE 660NM TO8

47

NTE30049

NTE30049

NTE Electronics, Inc.

PHOTODIODE 900NM ID=30NA

1890

AXUV100AL

AXUV100AL

Opto Diode Corporation

SENSOR ELECTRON DETECTION 100MM

13

Optical Sensors - Photodiodes

1. Overview

Photodiodes are semiconductor devices that convert optical signals into electrical currents. Operating under reverse bias voltage, they generate electron-hole pairs when exposed to light, enabling precise light intensity measurement. As critical components in optoelectronics, photodiodes enable applications ranging from industrial automation to medical diagnostics, offering advantages like fast response times, high reliability, and compatibility with digital systems.

2. Major Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN PhotodiodeWide depletion region for high quantum efficiencyHigh-speed optical communication (e.g., 10Gbps fiber links)
Avalanche Photodiode (APD)Internal gain through impact ionizationLIDAR systems, single-photon detection
Schottky PhotodiodeLow capacitance for fast switchingUV radiation monitoring in semiconductor manufacturing
Metal-Semiconductor-Metal (MSM)Planar structure for high-frequency operationOptical interconnects in data centers
UV PhotodiodeSpectral sensitivity below 400nmFlame detection systems, water purification monitoring

3. Structure and Components

Photodiodes typically consist of a p-n junction or p-i-n structure fabricated from silicon, germanium, or indium gallium arsenide (InGaAs). The core components include: (1) Light-receiving window with anti-reflective coating, (2) Active semiconductor layer for photon absorption, (3) Electrodes (anode/cathode) for current collection, (4) Ceramic or plastic package with optical filter integration. Advanced designs incorporate micro-lenses and back-illuminated structures to enhance quantum efficiency.

4. Key Technical Specifications

ParameterDescriptionImportance
Responsivity (A/W)Current output per unit optical powerDetermines signal strength at given irradiance
Dark Current (nA)Leakage current without illuminationImpacts signal-to-noise ratio in low-light conditions
Rise Time (ns)Response speed to intensity changesCritical for high-frequency modulation applications
Junction Capacitance (pF)Parasitic capacitance at depletion regionLimits bandwidth in transimpedance amplifier circuits
Spectral Response Range (nm)Effective wavelength detection windowDictates compatibility with light sources (e.g., 850nm VCSELs)

5. Application Fields

  • Industrial Automation: Object detection in conveyor systems
  • Medical Imaging: X-ray detectors in CT scanners
  • Consumer Electronics: Proximity sensors in smartphones
  • Telecommunications: 100Gbps coherent optical receivers
  • Environmental Monitoring: Solar radiation sensors for weather stations

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Hamamatsu PhotonicsS1223-6BQHigh-speed Si photodiode with 1.3GHz bandwidth
OSRAM OptoBFW21RBlue-enhanced PIN diode for LiDAR applications
First SensorFDS030Low-noise APD for single-photon counting
Excelitas TechnologiesC30655GHInGaAs photodiode for 1.55 m telecom wavelengths
Vishay SemiconductorsBPW34SHigh-radiation hardness for industrial sensors

7. Selection Recommendations

Key considerations include: (1) Spectral matching with light source (e.g., InGaAs for 1550nm fiber systems), (2) Response time requirements (PIN vs APD tradeoffs), (3) Operating temperature range (-40 C to +85 C industrial grade), (4) Packaging constraints (SMD vs through-hole), and (5) Cost vs performance optimization (e.g., APDs require bias voltage regulators).

Industry Trends

Current development focuses on: (1) Graphene-based photodiodes for THz imaging, (2) CMOS-integrated single-photon avalanche diodes (SPADs) for LiDAR, (3) Flexible organic photodiodes for wearable devices, (4) Quantum dot photodiodes for extended IR sensitivity, and (5) AI-driven smart sensors with on-chip signal processing. Market growth is projected at 7.2% CAGR through 2028, driven by 5G optical networks and autonomous vehicle sensing systems.

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