PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27201D

UCC27201D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

202

TPIC46L01DBR

TPIC46L01DBR

Texas Instruments

IC GATE DRVR LOW-SIDE 28SSOP

0

UCC27200ADRMT

UCC27200ADRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

483

LM27222M/NOPB

LM27222M/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

196

LM25101ASDX/NOPB

LM25101ASDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

LM25101AMR/NOPB

LM25101AMR/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

LM9061M/NOPB

LM9061M/NOPB

Texas Instruments

IC GATE DRVR HIGH-SIDE 8SOIC

236

TPS2831PWP

TPS2831PWP

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

28502

UC3707N

UC3707N

Texas Instruments

IC GATE DRVR LOW-SIDE 16DIP

0

UCC27511ADBVR

UCC27511ADBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

499

LM5102MM/NOPB

LM5102MM/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10VSSOP

5350

UCC27524ADGNR

UCC27524ADGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UCC37322DR

UCC37322DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

TPS2830PWPR

TPS2830PWPR

Texas Instruments

TPS2830 NON-INVERTING FAST SYNCH

0

TPS2811QPWRQ1

TPS2811QPWRQ1

Texas Instruments

TPS2811 INVERTING DUAL HIGH-SPEE

5995

UCC27321DGN

UCC27321DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

322

UCC27524DGNR

UCC27524DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

39

LM25101CSD/NOPB

LM25101CSD/NOPB

Texas Instruments

LM25101 3A, 2A AND 1A HIGH VOLTA

2000

LM5111-4MY/NOPB

LM5111-4MY/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

986

UCD7232RTJR

UCD7232RTJR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 20QFN

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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