PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UC2705DG4

UC2705DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

LM5109BQNGTTQ1

LM5109BQNGTTQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

0

UCC37324DR

UCC37324DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2815

LM25101CMY/NOPB

LM25101CMY/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8MSOP

0

UC2708NE

UC2708NE

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

1921

TPS2830D

TPS2830D

Texas Instruments

TPS2830 NON-INVERTING FAST SYNCH

17234

UCC37322DRG4

UCC37322DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

LM5102SDX/NOPB

LM5102SDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

LM5114ASD/NOPB

LM5114ASD/NOPB

Texas Instruments

LM5114 SINGLE 7.6A PEAK CURRENT

10995

UCC27201DRMR

UCC27201DRMR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

0

UCC27201AQDDARQ1

UCC27201AQDDARQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

TPS2837DR

TPS2837DR

Texas Instruments

TPS2837 INVERTING FAST SYNCHRONO

7450

TPS2834D

TPS2834D

Texas Instruments

TPS2834 NON-INVERTING FAST SYNCH

3804

LM5134AMFX/NOPB

LM5134AMFX/NOPB

Texas Instruments

LM5134 SINGLE, 7.6A PEAK CURRENT

2670

LM5114BMFX/S7003094

LM5114BMFX/S7003094

Texas Instruments

LM5114 SINGLE 7.6A PEAK CURRENT

899

LM27222SD/NOPB

LM27222SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

412

UCC27531D

UCC27531D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

683

UCC27222PWPG4

UCC27222PWPG4

Texas Instruments

IC GATE DRVR HALF-BRIDG 14HTSSOP

0

UC3708DWTR

UC3708DWTR

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

TPS28225DRBR

TPS28225DRBR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SON

3185

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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