PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27323P

UCC27323P

Texas Instruments

UCC27323 DUAL 4 A PEAK HIGH SPEE

392

UCC37323D

UCC37323D

Texas Instruments

UCC37323 DUAL 4 A PEAK HIGH SPEE

5747

UCC27201DRMT

UCC27201DRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

148

UCC37325P

UCC37325P

Texas Instruments

UCC37325 DUAL 4 A PEAK HIGH SPEE

9515

UC3706DWG4

UC3706DWG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

0

UCC27525D

UCC27525D

Texas Instruments

UCC27525 DUAL, 5A, HIGH-SPEED LO

0

TPS2815P

TPS2815P

Texas Instruments

TPS2815 TWO INPUT NAND, DUAL HIG

15265

UCC27282DR

UCC27282DR

Texas Instruments

3-A, 120-V HALF BRIDGE GATE DRIV

1886

UCC27324DGNRG4

UCC27324DGNRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UCC27714DR

UCC27714DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 14SOIC

8634

UC3708DW

UC3708DW

Texas Instruments

IC GATE DRVR LOW-SIDE 16SOIC

90

UCC21222DR

UCC21222DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

1497

UCC21222D

UCC21222D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

130

UC3709NG4

UC3709NG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

LM27222M-TI

LM27222M-TI

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER,

16815

UCD7201PWP

UCD7201PWP

Texas Instruments

IC GATE DRVR LOW-SIDE 14HTSSOP

199

UCC27211ADRMT

UCC27211ADRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

8095

TPS51601ADRBT

TPS51601ADRBT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SON

500

TPS2818MDBVREPG4

TPS2818MDBVREPG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

UCC27282QDQ1

UCC27282QDQ1

Texas Instruments

120V LOW COST HS/LS DRIVER- D PK

1486

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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