PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TPS2815DR

TPS2815DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC24624DR

UCC24624DR

Texas Instruments

PWR MGMT MOSFET/PWR DRIVER

2375

UCC27524P

UCC27524P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

69310000

UCC27511DBVT

UCC27511DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

0

LM5110-3SD

LM5110-3SD

Texas Instruments

BUFFER/INVERTER BASED PERIPHERAL

3190

LMG1205YFXT

LMG1205YFXT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 12DSBGA

341710000

UCC27201DR

UCC27201DR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

2158

TPIC44H01DAG4

TPIC44H01DAG4

Texas Instruments

TPIC44H01 4-CHANNEL SERIAL/PARAL

0

UCC27322QDGNRQ1

UCC27322QDGNRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

2177

TPS2829DBVRG4

TPS2829DBVRG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

UCC27200ADRCT

UCC27200ADRCT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 9VSON

337

LM5100MX/NOPB

LM5100MX/NOPB

Texas Instruments

HALF BRIDGE PERIPHERAL DRIVER

0

UC3705N

UC3705N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

184

UC2708DWTR

UC2708DWTR

Texas Instruments

UC2708 NON-INVERTING HIGH SPEED

1970

DRV8304HRHAR

DRV8304HRHAR

Texas Instruments

IC GATE DRVR HI/LOW SIDE 40VQFN

0

TPIC46L01DBRG4

TPIC46L01DBRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 28SSOP

0

LM5109BMAX/NOPB

LM5109BMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

347

TPS2828DBVRG4

TPS2828DBVRG4

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

UCC27525DR

UCC27525DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

3808

UCC27321D

UCC27321D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

80

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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