PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LM5112SD/NOPB

LM5112SD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

2370

UCC27424P

UCC27424P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

59810000

TPS2831D

TPS2831D

Texas Instruments

TPS2831 INVERTING FAST SYNCHRONO

8650

LM5114BSDX/NOPB

LM5114BSDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

UC3707NG4

UC3707NG4

Texas Instruments

IC GATE DRVR LOW-SIDE 16DIP

0

LM5101ASDX

LM5101ASDX

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

TPS28226D

TPS28226D

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

445

UCC27210D

UCC27210D

Texas Instruments

UCC27210 120V BOOT, 4A PEAK, HIG

10885

UCC27528QDRQ1

UCC27528QDRQ1

Texas Instruments

UCC27528-Q1 UCC27528-Q1 DUAL 5-A

7512

SN75374N

SN75374N

Texas Instruments

IC GATE DRVR LOW-SIDE 16DIP

160

UCC27425DGN

UCC27425DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

224

TPS2811PW

TPS2811PW

Texas Instruments

TPS2811 INVERTING DUAL HIGH-SPEE

6750

LM5101CMYE/NOPB

LM5101CMYE/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8MSOP

2

TPS2817DBVR

TPS2817DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

2881

UCC27424QDGNRQ1

UCC27424QDGNRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

UCC27523DGN

UCC27523DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

630

TPS2812DR

TPS2812DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

4378

UCC27322DRG4

UCC27322DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

TPS51604QDSGRQ1

TPS51604QDSGRQ1

Texas Instruments

SYNCHRONOUS BUCK FET DRIVER FOR

2832

UCC27611DRVR

UCC27611DRVR

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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