PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TPS2834PWPR

TPS2834PWPR

Texas Instruments

TPS2834 NON-INVERTING FAST SYNCH

3340

UCC27325D

UCC27325D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

129

UCC27511DBVR

UCC27511DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

0

UCC27516DRST

UCC27516DRST

Texas Instruments

UCC27516 4A/4A SINGLE CHANNEL HI

941

UCC27200DRMR

UCC27200DRMR

Texas Instruments

UCC27200 120V BOOT, 3-A PEAK, HI

509

UCC27212AQDDARQ1

UCC27212AQDDARQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

2500

UCC27425DG4

UCC27425DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UC3714DTR

UC3714DTR

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

39670

SM74104SD/NOPB

SM74104SD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

1000

UCC27512MDRSTEP

UCC27512MDRSTEP

Texas Instruments

IC GATE DRVR LOW-SIDE 6SON

737

UCC27531DR

UCC27531DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

792

UCC37321PG4

UCC37321PG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

LM5112MYX/NOPB

LM5112MYX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

1569

LM5112Q1SDX/NOPB

LM5112Q1SDX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

LM5112SD

LM5112SD

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

7500

LM5109BSD/NOPB

LM5109BSD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

7

UCC27325DGNR

UCC27325DGNR

Texas Instruments

UCC27325 DUAL 4 A PEAK HIGH SPEE

93848

UCC27425D

UCC27425D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

645

UCC27210DDA

UCC27210DDA

Texas Instruments

UCC27210 120V BOOT, 4A PEAK, HIG

55685

UCC27324DGNR

UCC27324DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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