PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LM5110-3M/NOPB

LM5110-3M/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

197

LM5109BMA/NOPB

LM5109BMA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

1131

UCC37322DG4

UCC37322DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27423MDREP

UCC27423MDREP

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

844

TPS28225DRBT

TPS28225DRBT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SON

2688

LM5101ASD

LM5101ASD

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27425DR

UCC27425DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

4053

TPS2813P

TPS2813P

Texas Instruments

TPS2813 COMPLEMENTARY DUAL HIGH-

26983

LM25101ASD/NOPB

LM25101ASD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC21530QDWKQ1

UCC21530QDWKQ1

Texas Instruments

IC GATE DRVR ISOLATED

0

LM5101ASDX/NOPB

LM5101ASDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27532DBVR

UCC27532DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

0

LM5110-1SD

LM5110-1SD

Texas Instruments

IC GATE DRVR LOW-SIDE 10WSON

0

LM25101BSD/NOPB

LM25101BSD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

LM5101ASD/NOPB

LM5101ASD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

7617

UCC27537DBVR

UCC27537DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

2929

LM5109MAX/NOPB

LM5109MAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

0

LM5101ASDX-1/NOPB

LM5101ASDX-1/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

0

TPS2819DBVR

TPS2819DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

3911

UC3706DWTR

UC3706DWTR

Texas Instruments

UC3706 DUAL HIGH SPEED MOSFET DR

5720

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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