PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
TPIC44H01DAR

TPIC44H01DAR

Texas Instruments

TPIC44H01 4-CHANNEL SERIAL/PARAL

39500

UCC27323DRG4

UCC27323DRG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UC1710SP

UC1710SP

Texas Instruments

BUFFER/INVERTER MOSFET DRIVER

91

UC2714DG4

UC2714DG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCD7201PWPR

UCD7201PWPR

Texas Instruments

IC GATE DRVR LOW-SIDE 14HTSSOP

263

UCC27322DGN

UCC27322DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

243210000

SN75372PG4

SN75372PG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

0

UCC37321D

UCC37321D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

7128

LM5134BMF/NOPB

LM5134BMF/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

1446

UCC37323P

UCC37323P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

22

UCC27324P

UCC27324P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

3873250

DRV8304HRHAT

DRV8304HRHAT

Texas Instruments

IC GATE DRVR HI/LOW SIDE 40VQFN

0

LM5134BSD/NOPB

LM5134BSD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

185

UCC37321DR

UCC37321DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27536DBVR

UCC27536DBVR

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

3468

LM5104M-TI

LM5104M-TI

Texas Instruments

HALF BRIDGE BASED PERIPHERAL DRI

1930

5962-9579801MPA

5962-9579801MPA

Texas Instruments

UC1705 COMPLEMENTARY HIGH SPEED

204

LM25101CMAX/NOPB

LM25101CMAX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

300

TPIC46L02DBRG4

TPIC46L02DBRG4

Texas Instruments

TPIC46L02 6-CHANNEL SERIAL/PARAL

1000

UCC27324DGNG4

UCC27324DGNG4

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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