PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
LM5107MA/NOPB

LM5107MA/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

4077

UCC27526DSDR

UCC27526DSDR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

2088

UCC21222QDRQ1

UCC21222QDRQ1

Texas Instruments

IC GATE DRVR HALF-BRIDGE 16SOIC

0

LM5106SDX/NOPB

LM5106SDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

SM74104SDX/NOPB

SM74104SDX/NOPB

Texas Instruments

SM74104 HIGH VOLTAGE HALF-BRIDGE

0

LM5134ASD/NOPB

LM5134ASD/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 6WSON

0

UCC37324PE4

UCC37324PE4

Texas Instruments

UCC37324 DUAL 4 A PEAK HIGH SPEE

350

UCC27200DRMT

UCC27200DRMT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8VSON

500

UCC27322QDRQ1

UCC27322QDRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2772

TPS2814PWR

TPS2814PWR

Texas Instruments

IC GATE DRVR LOW-SIDE 8TSSOP

1427

UCC27423QDGNRQ1

UCC27423QDGNRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM25101AMRX/NOPB

LM25101AMRX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

0

UCC27518DBVT

UCC27518DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

637

UCC27321QDRQ1

UCC27321QDRQ1

Texas Instruments

UCC27321-Q1 AUTOMOTIVE 9A HIGH S

12795

UCC27423P

UCC27423P

Texas Instruments

UCC27423 DUAL 4-A MOSFET DRIVER

19333

TPS2849PWP

TPS2849PWP

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

11156

UC2707N

UC2707N

Texas Instruments

UC2707 COMPLEMENTARY HIGH SPEED

6276

UCC27527DSDR

UCC27527DSDR

Texas Instruments

UCC27527 DUAL 5-A HIGH-SPEED LOW

2944

UCC27512DRST

UCC27512DRST

Texas Instruments

IC GATE DRVR LOW-SIDE 6SON

250

UCC27200DRG4

UCC27200DRG4

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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