PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
EMB1412MYE/NOPB

EMB1412MYE/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM5060Q1MMX/NOPB

LM5060Q1MMX/NOPB

Texas Instruments

IC GATE DRVR HIGH-SIDE 10VSSOP

3560

LM5111-3MX

LM5111-3MX

Texas Instruments

BUFFER/INVERTER PERIPHL DRIVER

92500

LM5109BSDX/NOPB

LM5109BSDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

0

UC3709N

UC3709N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

323

LM5105SDX/NOPB

LM5105SDX/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

2770

UCC27210DPRR

UCC27210DPRR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27533DBVT

UCC27533DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

727

UCC37325DGN

UCC37325DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

553

UCC37322DGN

UCC37322DGN

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

1076

UCC27531QDBVRQ1

UCC27531QDBVRQ1

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

601

LM5111-2M/NOPB

LM5111-2M/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

593

UCD7138DRST

UCD7138DRST

Texas Instruments

UCD7138 LOW-SIDE POWER MOSFET DR

20100

UCC37323PE4

UCC37323PE4

Texas Instruments

BUFFER/INVERTER BASED MOSFET DRI

180

TPS2813PE4

TPS2813PE4

Texas Instruments

NAND GATE BASED MOSFET DRIVER, 2

280

UC3708NE

UC3708NE

Texas Instruments

IC GATE DRVR LOW-SIDE 16DIP

139

UCC27212DPRR

UCC27212DPRR

Texas Instruments

IC GATE DRVR HALF-BRIDGE 10WSON

0

UCC27524D

UCC27524D

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

7479975

UCC27524ADR

UCC27524ADR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

1937

LM5111-2MX/NOPB

LM5111-2MX/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

1991

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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