PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
UCC27322PE4

UCC27322PE4

Texas Instruments

UCC27322 SINGLE 9-A HIGH SPEED L

0

LMG1210RVRT

LMG1210RVRT

Texas Instruments

IC GATE DRVR HALF-BRIDGE 19WQFN

0

UCC27284QDRQ1

UCC27284QDRQ1

Texas Instruments

AUTOMOTIVE 3-A, 120-V HALF BRIDG

2484

TPS2839PWP

TPS2839PWP

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

14646

UCC27222PWP

UCC27222PWP

Texas Instruments

UCC27222 HIGH-EFFICIENCY PREDICT

9876

UCC27524DSDT

UCC27524DSDT

Texas Instruments

IC GATE DRVR LOW-SIDE 8SON

202

LM5114BMF/NOPB

LM5114BMF/NOPB

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-6

6467

UCC37324P

UCC37324P

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

323

UCC27524DR

UCC27524DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

0

UCC27323DR

UCC27323DR

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

2500

UC3708N

UC3708N

Texas Instruments

IC GATE DRVR LOW-SIDE 8DIP

133310000

UCC27201DDA

UCC27201DDA

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOPWR

294

UCC37324DGNR

UCC37324DGNR

Texas Instruments

IC GATE DRVR LOW-SIDE 8MSOP

0

LM5134AMF/NOPB

LM5134AMF/NOPB

Texas Instruments

LM5134 SINGLE, 7.6A PEAK CURRENT

7800

DRV8300DRGER

DRV8300DRGER

Texas Instruments

100-V MAX SIMPLE 3-PHASE GATE DR

0

LM9061MX/NOPB

LM9061MX/NOPB

Texas Instruments

IC GATE DRVR HIGH-SIDE 8SOIC

8812

UCC27211ADR

UCC27211ADR

Texas Instruments

HALF BRIDGE BASED MOSFET DRIVER

10261

TPS2832D

TPS2832D

Texas Instruments

TPS2832 NON-INVERTING FAST SYNCH

4171

UCC27517DBVT

UCC27517DBVT

Texas Instruments

IC GATE DRVR LOW-SIDE SOT23-5

0

LM5109ASD/NOPB

LM5109ASD/NOPB

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8WSON

27699

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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