PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR21064S

IR21064S

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 14SOIC

0

IR2127STR

IR2127STR

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

IRS21856STRPBF

IRS21856STRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR2132JTR

IR2132JTR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR21844S

IR21844S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IRS2332DJPBF

IRS2332DJPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2108S

IR2108S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR21531D

IR21531D

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

AUIRS2124S

AUIRS2124S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR21531STR

IR21531STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2154S

IR2154S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2152S

IR2152S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

TDA21106

TDA21106

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE DSO8

0

IR2125S

IR2125S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 16SOIC

0

IR2213

IR2213

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

IR2117

IR2117

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8DIP

0

IR2110

IR2110

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

AUIRS2117S

AUIRS2117S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR2151

IR2151

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

IR2131JTR

IR2131JTR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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