PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2130JTR

IR2130JTR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2136S

IR2136S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

1EDN8511BXTSA1

1EDN8511BXTSA1

IR (Infineon Technologies)

IC GATE DRV HALF BRD/LOW SOT23-6

0

IR21814

IR21814

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

IR2102

IR2102

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

IR21824

IR21824

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

IR2111S

IR2111S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2106STR

IR2106STR

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR21014

IR21014

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14DIP

0

IR2121

IR2121

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8DIP

0

IRS21962STRPBF

IRS21962STRPBF

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 16SOIC

0

IR2136

IR2136

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28DIP

0

IR2112STR

IR2112STR

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 16SOIC

0

AUIR3240S

AUIR3240S

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SO

0

IR2135J

IR2135J

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2112S

IR2112S

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 16SOIC

0

AUIRS2336S

AUIRS2336S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

AUIRS2301S

AUIRS2301S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR21094S

IR21094S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR2011

IR2011

IR (Infineon Technologies)

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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