PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR2135S

IR2135S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IRS21953SPBF

IRS21953SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF BRD/LOW 16SOIC

0

IR2131J

IR2131J

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IRS2330SPBF

IRS2330SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

IR21271STR

IR21271STR

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 8SOIC

0

98-0334PBF

98-0334PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2112-1PBF

IR2112-1PBF

IR (Infineon Technologies)

IC GATE DRVR HI/LOW SIDE 14DIP

0

IR4428

IR4428

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8DIP

0

IR4428STR

IR4428STR

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 8SOIC

0

IR2102S

IR2102S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2104

IR2104

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8DIP

0

IR44252LTRPBF

IR44252LTRPBF

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE SOT23-5

0

98-0317

98-0317

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 14SOIC

0

IR21366SPBF

IR21366SPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 28SOIC

0

98-0231

98-0231

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE 8SOIC

0

IR2182S

IR2182S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR2107S

IR2107S

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 8SOIC

0

IR1176S

IR1176S

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 20SSOP

0

IRS2113MPBF

IRS2113MPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16MLPQ

0

IRS2332JTRPBF

IRS2332JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

RFQ BOM Call Skype Email
Top