PMIC - Gate Drivers

Image Part Number Description / PDF Quantity Rfq
IR11671ASTRPBF

IR11671ASTRPBF

IR (Infineon Technologies)

IC GATE DRVR FET EXTERNAL 8SOIC

0

IRS26310DJPBF

IRS26310DJPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR1176

IR1176

IR (Infineon Technologies)

IC GATE DRVR LOW-SIDE 20DIP

0

6EDM2003L06F06X1SA1

6EDM2003L06F06X1SA1

IR (Infineon Technologies)

IC GATE DRVR BARE DIE

0

98-0176PBF

98-0176PBF

IR (Infineon Technologies)

IC GATE DRIVER HALF BRIDGE 64MQF

0

IRS26320JTRPBF

IRS26320JTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 44PLCC

0

IR2110CX6SA1

IR2110CX6SA1

IR (Infineon Technologies)

IC GATE DRIVER

0

98-0086PBF

98-0086PBF

IR (Infineon Technologies)

IC GATE DRIVER HALF BRIDGE 8SOIC

0

IR2113C

IR2113C

IR (Infineon Technologies)

IC GATE DRIVER

0

IRS2509C

IRS2509C

IR (Infineon Technologies)

IC GATE DRVR MOSFET

0

111-4093PBF

111-4093PBF

IR (Infineon Technologies)

IC GATE DRVR 200V 8SOIC

0

111-4135PBF

111-4135PBF

IR (Infineon Technologies)

IC REGULATOR 22PQFN

0

IR3535MTRPBF

IR3535MTRPBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16MLPQ

0

98-0206PBF

98-0206PBF

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 16SOIC

0

IRS2332B

IRS2332B

IR (Infineon Technologies)

IC GATE DRVR HVIC DIE

0

IRS21851C

IRS21851C

IR (Infineon Technologies)

IC GATE DRVR HIGH-SIDE SGL 8SOIC

0

CHL8505CRT

CHL8505CRT

IR (Infineon Technologies)

IC GATE DRVR HALF-BRIDGE 10DFN

0

IR2101C

IR2101C

IR (Infineon Technologies)

IC GATE DRIVER

0

98-0519PBF

98-0519PBF

IR (Infineon Technologies)

IC DRIVER FULL SELF OSC 14-SOIC

0

IRS53365DC

IRS53365DC

IR (Infineon Technologies)

IC GATE DRVR

0

PMIC - Gate Drivers

1. Overview

Power Management Integrated Circuit (PMIC) Gate Drivers are specialized ICs designed to control the switching of power transistors (MOSFETs/IGBTs) in power conversion systems. They act as intermediaries between control circuits (e.g., MCUs) and high-power devices, ensuring efficient signal amplification and isolation. Their importance lies in optimizing energy efficiency, reducing switching losses, and enabling precise control in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
MOSFET DriversHigh-speed switching, low output impedanceDC-DC converters, motor drives
IGBT DriversHigh-current output, desaturation protectionIndustrial inverters, EV chargers
High-Side/Low-Side DriversBootstrap circuit support, level-shiftingH-bridge motor controllers
Isolated Gate DriversGalvanic isolation (opto/magnetic)Solar inverters, medical power supplies

3. Structure and Composition

A typical PMIC Gate Driver IC comprises:

  • Input logic interface (CMOS/TTL compatible)
  • Pre-driver stage for signal amplification
  • High-current output stage (push-pull configuration)
  • Protection circuits (UVLO, OCP, OTP)
  • Dead-time control logic
  • Power supply management module
Packaged in QFN, TSSOP, or SOIC formats with thermal pads for heat dissipation.

4. Key Technical Specifications

ParameterImportance
Drive Current ( A)Determines switching speed and RDS(on) control
Propagation Delay (ns)Impacts switching efficiency in high-frequency designs
Supply Voltage Range (V)Defines compatibility with power transistor requirements
Isolation Rating (kV)Critical for safety in high-voltage applications
Operating Temperature (-40 C to +150 C)Ensures reliability in harsh environments

5. Application Fields

  • Consumer Electronics: Smartphones (DC-DC converters), Laptops (VRM drivers)
  • Industrial: PLC motor controllers, 48V telecom rectifiers
  • Automotive: On-Board Chargers (OBC), Battery Management Systems (BMS)
  • Renewable Energy: Solar micro-inverters, Wind turbine converters
  • Home Appliances: Induction cookers, Smart energy meters

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
TIUCC275xx Family120V bootstrap, 4A peak current
Infineon1EDN7512Short-circuit protection, 150ns delay
STMicroL6386EHigh-side/low-side, 600V rating
ON SemiNCV845xAEC-Q100 qualified for automotive
JWIPCJW5258Integrated bootstrap diode, 100V

7. Selection Guidelines

Key considerations:

  • Match drive current to transistor gate charge requirements
  • Verify voltage tolerance for high-side configurations
  • Assess protection features for system reliability
  • Evaluate package thermal performance (e.g., JA < 50 C/W)
  • Select isolation level per safety standards (e.g., DIN V VDE V 0884-11)
Example: For a 650V IGBT in a welding inverter, choose an isolated driver with >10A current and DESAT protection.

8. Industry Trends

Future developments include:

  • Integration with GaN/SiC device drivers for >1000V applications
  • Advanced sensing (current/voltage feedback) in package
  • PMBus interface for smart power systems
  • Automotive-grade reliability (AEC-Q100 Grade 0 support)
  • Sub-50ns propagation delay for 1MHz+ switching
Market growth driven by EVs and renewable energy systems requiring >1500W power stages with >97% efficiency.

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