Memory - Configuration Proms for FPGAs

Image Part Number Description / PDF Quantity Rfq
XCF08PVO48C

XCF08PVO48C

Xilinx

CONFIG MEMORY, 8MX1, SERIAL

25973

XCF08PVO48C.

XCF08PVO48C.

Xilinx

CONFIG MEMORY, 8MX1, SERIAL

305

XC17128ELVO8C

XC17128ELVO8C

Xilinx

CONFIG MEMORY, 128KX1, SERIAL

51

XC17V02PC20I

XC17V02PC20I

Xilinx

CONFIG MEMORY, 2MX1, SERIAL

313

XC18V512PC20C

XC18V512PC20C

Xilinx

IC PROM SRL CONFIG 512K 20-PLCC

0

XC1701PC20C

XC1701PC20C

Xilinx

CONFIG MEMORY, 1MX1, SERIAL

41

XC18V04PC44C

XC18V04PC44C

Xilinx

IC PROM SER C-TEMP 3.3V 44-PLCC

0

XCF08PFSG48C

XCF08PFSG48C

Xilinx

IC PROM SRL 1.8V 8M GATE 48CSBGA

4

XC17256EPC20I

XC17256EPC20I

Xilinx

CONFIG MEMORY, 256KX1, SERIAL

1958

XC1765EVO8C

XC1765EVO8C

Xilinx

CONFIG MEMORY, 64KX1, SERIAL

575

XC1765ESOG8C

XC1765ESOG8C

Xilinx

CONFIG MEMORY, 64KX1, SERIAL

1035

XC18V512SOG20C

XC18V512SOG20C

Xilinx

IC PROM REPROGR 512KB 20-SOIC

0

XCF16PFSG48C

XCF16PFSG48C

Xilinx

IC PROM SRL 1.8V 16M 48CSBGA

20

XCF08PVO48C0973

XCF08PVO48C0973

Xilinx

CONFIG MEMORY, 8MX1, SERIAL

10395

XC17256ELPC20C

XC17256ELPC20C

Xilinx

CONFIG MEMORY, 256KX1, SERIAL

2131

XC17S150XLSO20C

XC17S150XLSO20C

Xilinx

CONFIG MEMORY, 1M BITS, SERIAL

550

XC18V04VQ44C

XC18V04VQ44C

Xilinx

IC PROM SRL FOR 4M GATE 44-VQFP

169

XC1765EVO8I

XC1765EVO8I

Xilinx

CONFIG MEMORY, 64KX1, SERIAL

3986

XC17V01SO20I

XC17V01SO20I

Xilinx

CONFIG MEMORY, 1MX1, SERIAL

3464

XC17256ELVO8C

XC17256ELVO8C

Xilinx

CONFIG MEMORY, 256KX1, SERIAL

1464

Memory - Configuration Proms for FPGAs

1. Overview

Configuration PROMs (Programmable Read-Only Memory) for FPGAs are non-volatile memory devices designed to store configuration data for Field-Programmable Gate Arrays (FPGAs). These devices enable FPGAs to retain their programmed logic functionality after power cycling. Modern applications demand reliable, high-speed, and secure storage solutions for FPGA configurations in aerospace, telecommunications, automotive, and industrial systems.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
OTP PROMsOne-Time Programmable, low cost, high reliabilityIndustrial control systems
Flash PROMsReprogrammable, high density, moderate endurance5G base stations
EEPROMByte-alterable, high endurance, slower access speedMedical imaging equipment
FRAMLow-power, radiation-hardened, fast write speedAerospace avionics

3. Structure and Composition

Typical configuration PROMs feature:

  • Package types: TSSOP, VQFN, BGA
  • Memory array: Floating-gate or antifuse-based technology
  • Interface: SPI, BPI, or parallel bus
  • Voltage rails: 1.2V-3.3V operation with decoupling capacitors
  • Error correction: Built-in ECC for radiation environments

4. Key Technical Specifications

ParameterSignificance
Memory density (1Mb-4Gb)Determines maximum FPGA configuration size
Access time (55ns-120ns)Impacts system boot speed
Endurance (10k-100k cycles)Dictates reprogramming lifespan
Data retention (20-100 years)Critical for long-term reliability
Radiation hardness (SEL/SEU immunity)Essential for space applications

5. Application Areas

Primary application domains:

  • Telecommunications: 5G NR base stations, optical transceivers
  • Industrial: Programmable logic controllers (PLCs)
  • Medical: MRI scanners, patient monitoring systems
  • Automotive: ADAS sensor fusion units
  • Defense: Radar signal processing systems

6. Key Manufacturers and Products

ManufacturerProduct SeriesKey Features
MicrochipAT17F Series128Mb SPI interface, -40 C to +125 C
IntelEP180SSecure boot, TSMC 16nm process
XilinxS25FL-VOctal SPI, 400MHz clock rate
CypressFL-S SeriesEnd-to-end data protection

7. Selection Guidelines

Key selection factors:

  • Match memory density to target FPGA's bitstream size
  • Verify interface compatibility (SPI/BPI/parallel)
  • Evaluate environmental requirements (temperature, radiation)
  • Assess security features (encryption, authentication)
  • Consider programming infrastructure (socket compatibility)

8. Industry Trends

Current development trends include:

  • Transition to 3D NAND architecture for densities beyond 8Gb
  • Integration of hardware security modules (HSM)
  • Adoption of JEDEC Xccela interface for >400MB/s throughput
  • Development of radiation-tolerant devices for LEO satellites
  • Implementation of AI-driven wear-leveling algorithms
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